Datasheet HMC740ST89E (Analog Devices)
| 制造商 | Analog Devices |
| 描述 | InGaP HBT Active Bias MMIC Amplifier, 0.05 - 3 GHz |
| 页数 / 页 | 8 / 1 — HMC740ST89E. InGaP HBT ACTIVE BIAS. MMIC AMPLIFIER, 0.05 – 3 GHz. Typical … |
| 文件格式/大小 | PDF / 675 Kb |
| 文件语言 | 英语 |
HMC740ST89E. InGaP HBT ACTIVE BIAS. MMIC AMPLIFIER, 0.05 – 3 GHz. Typical Applications. Features. Functional Diagram
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HMC740ST89E
v02.0813
InGaP HBT ACTIVE BIAS MMIC AMPLIFIER, 0.05 – 3 GHz Typical Applications Features
8 The HMC740ST89E is ideal for: P1dB Output Power: +18 dBm • Cel ular/3G & WiMAX/4G Gain: 15 dB • Fixed Wireless & WLAN Output IP3: +40 dBm T • CATV, Cable Modem & DBS Cascadable 50 Ohm I/Os M • Microwave Radio & Test Equipment Single Supply: +5V • IF & RF Applications Industry Standard SOT89 Package K - S Robust 1000V ESD, Class 1C C Stable Current Over Temperature LO Active Bias Network
Functional Diagram General Description
IN B The HMC740ST89E is an InGaP Heterojunction A Bipolar Transistor (HBT) Gain Block MMIC SMT amplifier covering 0.05 to 3 GHz. Packaged in an industry standard SOT89, the amplifier can be used R & G as a cascadable 50 Ohm RF or IF gain stage as E well as a PA or LO driver with up to +18 dBm output power. The HMC740ST89E offers 15 dB of gain with IV a +40 dBm output IP3 at 100 MHz, and can operate R directly from a +5V supply. The HMC740ST89E exhibits excel ent gain and output power stability over temperature, while requiring a minimal number of S - D external bias components. R IE LIF P
Electrical Specifications, Vcc = 5V, T = +25° C
M
A
A Parameter Min. Typ. Max. Min. Typ. Max. Units Frequency Range 0.05 - 1 0.05 - 3 GHz Gain 12 15 11 15 dB Gain Flatness ±0.1 ±0.7 dB Gain Variation over Temperature 0.003 0.006 0.003 0.006 dB/ °C Input Return Loss 18 15 dB Output Return Loss 18 18 dB Reverse Isolation 20 21 dB Output Power for 1 dB Compression (P1dB) 15.5 18 14.5 17 dBm Output Third Order Intercept (IP3) 38 32 dBm (Pout= 0 dBm per tone, 1 MHz spacing) Noise Figure 3.5 3.5 dB Supply Current (Icq) 88 88 mA Inf F or o m r p atio r n ifc ur e n , d ishe e d lbiv y e Anry a alog n D d t evic o p es is la be clie o eved rd to e b r e sa: H ccur iattte itae M nd reliic a r bl o e w . H a o v wee C ver, o n rp o For price, delivery, and to place orders: Analog Devices, Inc., responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other oration, 20 Alpha Road, Chelmsford, MA 01824 One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106 Phone: 978-250-3343 Fax: 978-250-3373 O rights of third parties that may result from its use. Specifications subject to change without notice. No rd Phoe n r O e: 7 n- 81-li 3 n 2 e a 9-4 t w 70 ww 0 • O . rdh e itt r o it nle i . n co e a m
8 - 1
license is granted by implication or otherwise under any patent or patent rights of Analog Devices. t www.analog.com Application Support: Phon Trademarks and registered trademarks are the property of their respective owners. e: 978-250-334 A 3 o pplic r a atio pp n S s u @ p h por ittti : Pte ho.c n o e m : 1-800-ANALOG-D
v02.0813
InGaP HBT ACTIVE BIAS MMIC AMPLIFIER, 0.05 – 3 GHz Typical Applications Features
8 The HMC740ST89E is ideal for: P1dB Output Power: +18 dBm • Cel ular/3G & WiMAX/4G Gain: 15 dB • Fixed Wireless & WLAN Output IP3: +40 dBm T • CATV, Cable Modem & DBS Cascadable 50 Ohm I/Os M • Microwave Radio & Test Equipment Single Supply: +5V • IF & RF Applications Industry Standard SOT89 Package K - S Robust 1000V ESD, Class 1C C Stable Current Over Temperature LO Active Bias Network
Functional Diagram General Description
IN B The HMC740ST89E is an InGaP Heterojunction A Bipolar Transistor (HBT) Gain Block MMIC SMT amplifier covering 0.05 to 3 GHz. Packaged in an industry standard SOT89, the amplifier can be used R & G as a cascadable 50 Ohm RF or IF gain stage as E well as a PA or LO driver with up to +18 dBm output power. The HMC740ST89E offers 15 dB of gain with IV a +40 dBm output IP3 at 100 MHz, and can operate R directly from a +5V supply. The HMC740ST89E exhibits excel ent gain and output power stability over temperature, while requiring a minimal number of S - D external bias components. R IE LIF P
Electrical Specifications, Vcc = 5V, T = +25° C
M
A
A Parameter Min. Typ. Max. Min. Typ. Max. Units Frequency Range 0.05 - 1 0.05 - 3 GHz Gain 12 15 11 15 dB Gain Flatness ±0.1 ±0.7 dB Gain Variation over Temperature 0.003 0.006 0.003 0.006 dB/ °C Input Return Loss 18 15 dB Output Return Loss 18 18 dB Reverse Isolation 20 21 dB Output Power for 1 dB Compression (P1dB) 15.5 18 14.5 17 dBm Output Third Order Intercept (IP3) 38 32 dBm (Pout= 0 dBm per tone, 1 MHz spacing) Noise Figure 3.5 3.5 dB Supply Current (Icq) 88 88 mA Inf F or o m r p atio r n ifc ur e n , d ishe e d lbiv y e Anry a alog n D d t evic o p es is la be clie o eved rd to e b r e sa: H ccur iattte itae M nd reliic a r bl o e w . H a o v wee C ver, o n rp o For price, delivery, and to place orders: Analog Devices, Inc., responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other oration, 20 Alpha Road, Chelmsford, MA 01824 One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106 Phone: 978-250-3343 Fax: 978-250-3373 O rights of third parties that may result from its use. Specifications subject to change without notice. No rd Phoe n r O e: 7 n- 81-li 3 n 2 e a 9-4 t w 70 ww 0 • O . rdh e itt r o it nle i . n co e a m
8 - 1
license is granted by implication or otherwise under any patent or patent rights of Analog Devices. t www.analog.com Application Support: Phon Trademarks and registered trademarks are the property of their respective owners. e: 978-250-334 A 3 o pplic r a atio pp n S s u @ p h por ittti : Pte ho.c n o e m : 1-800-ANALOG-D