Datasheet HMC396 (Analog Devices) - 3
| 制造商 | Analog Devices |
| 描述 | InGaP HBT GAIN BLOCK MMIC AMPLIFIER, DC - 8 GHz |
| 页数 / 页 | 6 / 3 — HMC396. InGaP HBT GAIN BLOCK. MMIC AMPLIFIER, DC - 8 GHz. P1dB vs. … |
| 文件格式/大小 | PDF / 287 Kb |
| 文件语言 | 英语 |
HMC396. InGaP HBT GAIN BLOCK. MMIC AMPLIFIER, DC - 8 GHz. P1dB vs. Temperature. Psat vs. Temperature. Power Compression @ 1 GHz
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HMC396
v02.0109
InGaP HBT GAIN BLOCK MMIC AMPLIFIER, DC - 8 GHz P1dB vs. Temperature Psat vs. Temperature
2 20 20 16 16 IP 12 12 H +25C 8 Psat (dBm) 8 +85C P1dB (dBm) -55C - C +25C 4 +85C 4 S -55C R 0 0 IE 0 2 4 6 8 10 0 2 4 6 8 10 FREQUENCY (GHz) FREQUENCY (GHz) IF L P M
Power Compression @ 1 GHz Power Compression @ 8 GHz
20 20 K A 15 15 OC 10 10 5 5 BL IN 0 0 A Pout Pout -5 -5 Gain Gain Pout (dBm), GAIN (dB), PAE (%) Pout (dBm), GAIN (dB), PAE (%) PAE PAE (%) -10 -10 & G -20 -15 -10 -5 0 5 10 -20 -16 -12 -8 -4 0 4 8 INPUT POWER (dBm) INPUT POWER (dBm) R E IV
Gain, Power, OIP3 & Supply Current vs.
R
Output IP3 vs. Temperature Supply Voltage @ 1 GHz
D 34 40 80 30 35 30 60 26 25 Icq Ic q (mA) 22 Psat (dBm), IP3 (dBm) 20 40 IP3 (dBm) +25C 18 15 +85C -55C 10 20 14 5 Gain Psat P1dB IP3 10 0 0 0 2 4 6 8 10 GAIN (dB), P1dB (dBm), 4.5 4.75 5 5.25 5.5 FREQUENCY (GHz) Vs(Vdc) Information furnish F ed obr pri y Anal ce, de og Device li s vie s r beyli, a eve nd to pla d to be accura ce o te and rder reliabl s e , pl . Ho ease co wever, no For price, delivery, and to place orders: Analog Devices, Inc., responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other ntact Hittite Microwave Corporation: One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106 rights of third parties that may result from its use. Specifications subject to change without notice. No
2 - 10
20 Alpha Road, Chelmsford, MA 01824 Phone: 978 Phon - e 25 : 7 0 81--3 32 3 9 4 - 3 F 70 ax 0 • O : 978 rder on -li25 n 0 e a - t 33 ww 73 license is granted by implication or otherwise under any patent or patent rights of Analog Devices. w.analog.com Order On Trademarks and registered trademarks are the property of their respective owners. -line at www.h A it p tpite.co licatio m n Support: Phone: 1-800-ANALOG-D
v02.0109
InGaP HBT GAIN BLOCK MMIC AMPLIFIER, DC - 8 GHz P1dB vs. Temperature Psat vs. Temperature
2 20 20 16 16 IP 12 12 H +25C 8 Psat (dBm) 8 +85C P1dB (dBm) -55C - C +25C 4 +85C 4 S -55C R 0 0 IE 0 2 4 6 8 10 0 2 4 6 8 10 FREQUENCY (GHz) FREQUENCY (GHz) IF L P M
Power Compression @ 1 GHz Power Compression @ 8 GHz
20 20 K A 15 15 OC 10 10 5 5 BL IN 0 0 A Pout Pout -5 -5 Gain Gain Pout (dBm), GAIN (dB), PAE (%) Pout (dBm), GAIN (dB), PAE (%) PAE PAE (%) -10 -10 & G -20 -15 -10 -5 0 5 10 -20 -16 -12 -8 -4 0 4 8 INPUT POWER (dBm) INPUT POWER (dBm) R E IV
Gain, Power, OIP3 & Supply Current vs.
R
Output IP3 vs. Temperature Supply Voltage @ 1 GHz
D 34 40 80 30 35 30 60 26 25 Icq Ic q (mA) 22 Psat (dBm), IP3 (dBm) 20 40 IP3 (dBm) +25C 18 15 +85C -55C 10 20 14 5 Gain Psat P1dB IP3 10 0 0 0 2 4 6 8 10 GAIN (dB), P1dB (dBm), 4.5 4.75 5 5.25 5.5 FREQUENCY (GHz) Vs(Vdc) Information furnish F ed obr pri y Anal ce, de og Device li s vie s r beyli, a eve nd to pla d to be accura ce o te and rder reliabl s e , pl . Ho ease co wever, no For price, delivery, and to place orders: Analog Devices, Inc., responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other ntact Hittite Microwave Corporation: One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106 rights of third parties that may result from its use. Specifications subject to change without notice. No
2 - 10
20 Alpha Road, Chelmsford, MA 01824 Phone: 978 Phon - e 25 : 7 0 81--3 32 3 9 4 - 3 F 70 ax 0 • O : 978 rder on -li25 n 0 e a - t 33 ww 73 license is granted by implication or otherwise under any patent or patent rights of Analog Devices. w.analog.com Order On Trademarks and registered trademarks are the property of their respective owners. -line at www.h A it p tpite.co licatio m n Support: Phone: 1-800-ANALOG-D