Datasheet IRLL110, SiHLL110 (Vishay) - 6
| 制造商 | Vishay |
| 描述 | Power MOSFET |
| 页数 / 页 | 9 / 6 — IRLL110, SiHLL110. Fig. 12a - Unclamped Inductive Test Circuit. Fig. 12b … |
| 文件格式/大小 | PDF / 364 Kb |
| 文件语言 | 英语 |
IRLL110, SiHLL110. Fig. 12a - Unclamped Inductive Test Circuit. Fig. 12b - Unclamped Inductive Waveforms
该数据表的模型线
文件文字版本
IRLL110, SiHLL110
www.vishay.com Vishay Siliconix L V VDS DS Vary tp to obtain tp required IAS VDD R D.U.T g + V - DD VDS IAS 5 V t 0.01 p Ω IAS
Fig. 12a - Unclamped Inductive Test Circuit Fig. 12b - Unclamped Inductive Waveforms Fig. 12c - Maximum Avalanche Energy vs. Drain Current
Current regulator Same type as D.U.T. Q 50 kΩ G 12 V 0.2 µF 5.0 V 0.3 µF Q Q GS GD + V D.U.T. DS - VG VGS 3 mA Charge I I G D Current sampling resistors
Fig. 13a - Basic Gate Charge Waveform Fig. 13b - Gate Charge Test Circuit
S15-1195-Rev. F, 25-May-15
6
Document Number: 91320 For technical questions, contact: hvm@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
www.vishay.com Vishay Siliconix L V VDS DS Vary tp to obtain tp required IAS VDD R D.U.T g + V - DD VDS IAS 5 V t 0.01 p Ω IAS
Fig. 12a - Unclamped Inductive Test Circuit Fig. 12b - Unclamped Inductive Waveforms Fig. 12c - Maximum Avalanche Energy vs. Drain Current
Current regulator Same type as D.U.T. Q 50 kΩ G 12 V 0.2 µF 5.0 V 0.3 µF Q Q GS GD + V D.U.T. DS - VG VGS 3 mA Charge I I G D Current sampling resistors
Fig. 13a - Basic Gate Charge Waveform Fig. 13b - Gate Charge Test Circuit
S15-1195-Rev. F, 25-May-15
6
Document Number: 91320 For technical questions, contact: hvm@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000