Datasheet 2N5551 / MMBT5551 (ON Semiconductor) - 6
| 制造商 | ON Semiconductor |
| 描述 | NPN General Purpose Amplifier |
| 页数 / 页 | 11 / 6 — 2 N 5551 / MMBT5551 — NPN Ge. Typical Performance Characteristics. … |
| 修订版 | 2 |
| 文件格式/大小 | PDF / 417 Kb |
| 文件语言 | 英语 |
2 N 5551 / MMBT5551 — NPN Ge. Typical Performance Characteristics. Between Emitter-Base. vs Collector Current. C = 1.0 mA. GA T
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2 N 5551 / MMBT5551 — NPN Ge Typical Performance Characteristics
(Continued)
) Between Emitter-Base vs Collector Current (V
260
IN
16
I C = 1.0 mA GA T FREG = 20 MHz
240
V CE = 10V LTAGE N E O R
12
V R N U
220
C L A
8
DOW N
200
IG EAK S L L
4 180
BR A M - R CE - S
160
FE neral-Purpose Amplifier
0 0.1 1 10 100 1000
h BV
1 10 50
RESISTANCE (k
Ω
) I - COLLECTOR CURRENT (mA) C Figure 7. Collector- Emitter Breakdown Voltage Figure 8. Small Signal Current Gain vs. Collector with Resistance between Emitter-Base Current
700
) W
600
(m ON
500
TO-92 TI A P
400
SOT-23 SSI
300
R DI E
200
POW -
100
P D
0 0 25 50 75 100 125 150
TEMPERATURE ( oC) Figure 9. Power Dissipation vs. Ambient Temperature
© 2009 Semiconductor Components Industries, LLC www.onsemi.com 2N5551 / MMBT5551 Rev. 2 5
(Continued)
) Between Emitter-Base vs Collector Current (V
260
IN
16
I C = 1.0 mA GA T FREG = 20 MHz
240
V CE = 10V LTAGE N E O R
12
V R N U
220
C L A
8
DOW N
200
IG EAK S L L
4 180
BR A M - R CE - S
160
FE neral-Purpose Amplifier
0 0.1 1 10 100 1000
h BV
1 10 50
RESISTANCE (k
Ω
) I - COLLECTOR CURRENT (mA) C Figure 7. Collector- Emitter Breakdown Voltage Figure 8. Small Signal Current Gain vs. Collector with Resistance between Emitter-Base Current
700
) W
600
(m ON
500
TO-92 TI A P
400
SOT-23 SSI
300
R DI E
200
POW -
100
P D
0 0 25 50 75 100 125 150
TEMPERATURE ( oC) Figure 9. Power Dissipation vs. Ambient Temperature
© 2009 Semiconductor Components Industries, LLC www.onsemi.com 2N5551 / MMBT5551 Rev. 2 5