Datasheet BC556B, BC557A, BC557B, BC557C, BC558B (ON Semiconductor) - 4
| 制造商 | ON Semiconductor |
| 描述 | PNP Bipolar Transistor |
| 页数 / 页 | 7 / 4 — BC556B, BC557A, B, C, BC558B. BC556. Figure 7. DC Current Gain. Figure 8. … |
| 修订版 | 3 |
| 文件格式/大小 | PDF / 84 Kb |
| 文件语言 | 英语 |
BC556B, BC557A, B, C, BC558B. BC556. Figure 7. DC Current Gain. Figure 8. “On” Voltage. Figure 9. Collector Saturation Region
该数据表的模型线
文件文字版本
BC556B, BC557A, B, C, BC558B BC556
−1.0 TJ = 25°C VCE = −5.0 V −0.8 TA = 25°C VBE(sat) @ IC/IB = 10 2.0 TS) −0.6 VBE @ VCE = −5.0 V GAIN (NORMALIZED) 1.0 TAGE (VOL −0.4 0.5 V, VOL −0.2 , DC CURRENT 0.2 VCE(sat) @ IC/IB = 10 h FE 0 −0.1 −0.2 −1.0 −2.0 −5.0 −10 −20 −50 −100 −200 −0.2 −0.5 −1.0 −2.0 −5.0 −10 −20 −50 −100 −200 IC, COLLECTOR CURRENT (mA) IC, COLLECTOR CURRENT (mA)
Figure 7. DC Current Gain Figure 8. “On” Voltage
−2.0 −1.0 TS) C)° −1.6 (mV/ −1.4 TAGE (VOL IC = −20 mA −50 mA −100 mA −200 mA −1.2 −10 mA −1.8 qVB for VBE COEFFICIENT −55°C to 125°C −0.8 −2.2 OR−EMITTER VOL TURE −0.4 −2.6 , COLLECT , TEMPERA TJ = 25°C VB V CE θ 0 −3.0 −0.02 −0.05 −0.1 −0.2 −0.5 −1.0 −2.0 −5.0 −10 −20 −0.2 −0.5 −1.0 −2.0 −5.0 −10 −20 −50 −100 −200 IB, BASE CURRENT (mA) IC, COLLECTOR CURRENT (mA)
Figure 9. Collector Saturation Region Figure 10. Base−Emitter Temperature Coefficient
40 VCE = −5.0 V 500 TJ = 25°C 20 Cib 200 ANCE (pF) 10 100 ACIT 8.0 50 6.0 C, CAP Cob 4.0 20 f, CURRENT−GAIN − BANDWIDTH PRODUCT T 2.0−0.1 −0.2 −0.5 −1.0 −2.0 −5.0 −10 −20 −50 −100 −1.0 −10 −100 VR, REVERSE VOLTAGE (VOLTS) IC, COLLECTOR CURRENT (mA)
Figure 11. Capacitance Figure 12. Current−Gain − Bandwidth Product http://onsemi.com 4
−1.0 TJ = 25°C VCE = −5.0 V −0.8 TA = 25°C VBE(sat) @ IC/IB = 10 2.0 TS) −0.6 VBE @ VCE = −5.0 V GAIN (NORMALIZED) 1.0 TAGE (VOL −0.4 0.5 V, VOL −0.2 , DC CURRENT 0.2 VCE(sat) @ IC/IB = 10 h FE 0 −0.1 −0.2 −1.0 −2.0 −5.0 −10 −20 −50 −100 −200 −0.2 −0.5 −1.0 −2.0 −5.0 −10 −20 −50 −100 −200 IC, COLLECTOR CURRENT (mA) IC, COLLECTOR CURRENT (mA)
Figure 7. DC Current Gain Figure 8. “On” Voltage
−2.0 −1.0 TS) C)° −1.6 (mV/ −1.4 TAGE (VOL IC = −20 mA −50 mA −100 mA −200 mA −1.2 −10 mA −1.8 qVB for VBE COEFFICIENT −55°C to 125°C −0.8 −2.2 OR−EMITTER VOL TURE −0.4 −2.6 , COLLECT , TEMPERA TJ = 25°C VB V CE θ 0 −3.0 −0.02 −0.05 −0.1 −0.2 −0.5 −1.0 −2.0 −5.0 −10 −20 −0.2 −0.5 −1.0 −2.0 −5.0 −10 −20 −50 −100 −200 IB, BASE CURRENT (mA) IC, COLLECTOR CURRENT (mA)
Figure 9. Collector Saturation Region Figure 10. Base−Emitter Temperature Coefficient
40 VCE = −5.0 V 500 TJ = 25°C 20 Cib 200 ANCE (pF) 10 100 ACIT 8.0 50 6.0 C, CAP Cob 4.0 20 f, CURRENT−GAIN − BANDWIDTH PRODUCT T 2.0−0.1 −0.2 −0.5 −1.0 −2.0 −5.0 −10 −20 −50 −100 −1.0 −10 −100 VR, REVERSE VOLTAGE (VOLTS) IC, COLLECTOR CURRENT (mA)
Figure 11. Capacitance Figure 12. Current−Gain − Bandwidth Product http://onsemi.com 4