Preliminary Datasheet CXT-741Gxx (Cissoid) - 5

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May. 19 High Temperature Automotive Configurable Logic Gates Preliminary Datasheet CXT-741G57/CXT-741G58/CXT-741G97/CXT-741G175 Absolute Maximum Ratings(see note 3) Symbol Parameter Min. Max. Units
VDD Supply Voltage Range -0.5 6.5 V VI Input Voltage Range -0.5 6.5 V VO Voltage applied to output in high or low state -0.3 Min(VDD+0.5, 6.5V) V IIK Input Clamp Current (VI<0) -30 mA IOK Output Clamp Current (VO<0 VO>VDD) 30 mA IO Continuous Output Current 20 mA TJ Operating Junction Temperature -55 175 °C TSTG Storage Temperature -55 175 °C ESD HBM ESD Rating (Human Body Model) 2 kV ESD MM ESD Rating (Machine Model) 200 V
Operating conditions Symbol Parameter Min. Max. Units
VDD Supply Voltage Range -0.5 5.5 V VI Input Voltage Range -0.5 5.4 V VO Voltage applied to output in high or low state -0.3 Min(VDD+0.5, 5.5V) V VDD=1.65V 4 High-Level V I DD=2.3V 8 OH mA Output Current VDD=3V 12 VDD=4.5V 16 VDD=1.65V 4 Low-Level V I DD=2.3V 8 OL mA Output Current VDD=3V 12 VDD=4.5V 16 VDD=1.8V±10% 20 Δ Input transition rise or V t/ΔV DD=2.5V±10% 20 I ns/V fall time VDD=3.3V±10% 10 VDD=5V±10% 5 TJ Operating Junction Temperature -55 175 °C TA Operating Ambient Temperature -55 175 °C
Electrical Characteristics Symbol Parameter Test conditions VDD Min. Typ Max. Units
CI 3.3 2.7 pF CPD Power dissipation capaci- F= 10 MHz 1.8 to pF 7.43 tance 5V ΘJA Device mounted on FR-4 substrate PC board, 2oz 204 °C/W ΘJC copper, with minimum recommended pad layout 52 °C/W Note 3 : Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this speci- fication is not implied. Frequent or extended exposure to absolute maximum rating conditions or above may affect device reliability.
PUBLIC Doc. PDS-192011 V1.0 WWW.CISSOID.COM
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