Datasheet SBR8M100P5Q (Diodes) - 2
| 制造商 | Diodes |
| 描述 | 8A Sbr Super Barrier Rectifier |
| 页数 / 页 | 6 / 2 — SBR8M100P5Q. Maximum Ratings. Characteristic. Symbol. Value. Unit. … |
| 文件格式/大小 | PDF / 493 Kb |
| 文件语言 | 英语 |
SBR8M100P5Q. Maximum Ratings. Characteristic. Symbol. Value. Unit. Thermal Characteristics. Electrical Characteristics. Min. Typ. Max
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SBR8M100P5Q Maximum Ratings
(@TA = +25°C, unless otherwise specified.)
Characteristic Symbol Value Unit
Peak Repetitive Reverse Voltage Working Peak Reverse Voltage VRRM 100 V DC Blocking Voltage Average Rectified Output Current IO 8 A Non-Repetitive Peak Forward Surge Current 8.3mS IFSM 130 A Non-Repetitive Avalanche Energy at IAS = 5.0A, L = 50mH EAS 400 mJ Non-Repetitive Avalanche Energy at IAS = 20.0A, L = 1mH EAS 150 mJ Electrostatic Discharge HBM 4000 V Electrostatic Discharge MM 400 V Electrostatic Discharge CDM 1 kV
Thermal Characteristics Characteristic Symbol Value Unit
Typical Thermal Resistance Junction to Ambient (Note 7) RθJA 25 °C/W Typical Thermal Resistance Junction to Ambient (Note 8) RθJA 90 °C/W Operating and Storage Temperature Range TJ, TSTG -55 to +175 °C
Electrical Characteristics
(@TA = +25°C, unless otherwise specified.)
Characteristic Symbol Min Typ Max Unit Test Condition
— 0.72 — IF = 4A, TJ = +25°C — 0.78 0.88 IF = 8A, TJ = +25°C Forward Voltage Drop VF — V 0.59 — IF = 4A, TJ = +125°C — 0.65 0.74 IF = 8A, TJ = +125°C — 0.08 2.0 VR = 100V, TJ = +25°C Leakage Current (Note 9) IR — µA 15 100 VR = 100V, TJ = +125°C Junction Capacitance CJ — 245 — pF VR = 4V, TJ = +25°C I Switching Speed t F = 0.5A, IR = 1A, IRR = 0.25A RR tRR — 16 — ns (RG1) Notes: 7. 2inch sq. Al board. 8. MRP FR-4 PC board, 2oz. 9. Short duration pulse test used to minimize self-heating effect. SBR8M100P5Q 2 of 6 December 2018 Document number: DS37626 Rev. 5 - 2
www.diodes.com
© Diodes Incorporated
(@TA = +25°C, unless otherwise specified.)
Characteristic Symbol Value Unit
Peak Repetitive Reverse Voltage Working Peak Reverse Voltage VRRM 100 V DC Blocking Voltage Average Rectified Output Current IO 8 A Non-Repetitive Peak Forward Surge Current 8.3mS IFSM 130 A Non-Repetitive Avalanche Energy at IAS = 5.0A, L = 50mH EAS 400 mJ Non-Repetitive Avalanche Energy at IAS = 20.0A, L = 1mH EAS 150 mJ Electrostatic Discharge HBM 4000 V Electrostatic Discharge MM 400 V Electrostatic Discharge CDM 1 kV
Thermal Characteristics Characteristic Symbol Value Unit
Typical Thermal Resistance Junction to Ambient (Note 7) RθJA 25 °C/W Typical Thermal Resistance Junction to Ambient (Note 8) RθJA 90 °C/W Operating and Storage Temperature Range TJ, TSTG -55 to +175 °C
Electrical Characteristics
(@TA = +25°C, unless otherwise specified.)
Characteristic Symbol Min Typ Max Unit Test Condition
— 0.72 — IF = 4A, TJ = +25°C — 0.78 0.88 IF = 8A, TJ = +25°C Forward Voltage Drop VF — V 0.59 — IF = 4A, TJ = +125°C — 0.65 0.74 IF = 8A, TJ = +125°C — 0.08 2.0 VR = 100V, TJ = +25°C Leakage Current (Note 9) IR — µA 15 100 VR = 100V, TJ = +125°C Junction Capacitance CJ — 245 — pF VR = 4V, TJ = +25°C I Switching Speed t F = 0.5A, IR = 1A, IRR = 0.25A RR tRR — 16 — ns (RG1) Notes: 7. 2inch sq. Al board. 8. MRP FR-4 PC board, 2oz. 9. Short duration pulse test used to minimize self-heating effect. SBR8M100P5Q 2 of 6 December 2018 Document number: DS37626 Rev. 5 - 2
www.diodes.com
© Diodes Incorporated