Datasheet MA12070P (Infineon) - 9
| 制造商 | Infineon |
| 描述 | 2x80W ultra power efficient, fully integrated audio amplifier IC with I2S digital input |
| 页数 / 页 | 88 / 9 — 7 Electrical and Audio Characteristics. Table 7-1. Symbol. Parameter. … |
| 修订版 | 01_00 |
| 文件格式/大小 | PDF / 1.9 Mb |
| 文件语言 | 英语 |
7 Electrical and Audio Characteristics. Table 7-1. Symbol. Parameter. Conditions. Min. Typ. Max. Unit. POUT (BTL). POUT (PBTL). POUT (SE)
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7 Electrical and Audio Characteristics Table 7-1
Power Mode Profile = 0; VDD (Analog & Digital) = +5V; PVDD = +26V; TA = 0°C to +85°C. Typical values are at TA = +25°C
Symbol Parameter Conditions Min Typ Max Unit
Output Power per channel (peak),
POUT (BTL)
THD+N = 10%, RL Without Heatsink, = 8Ω, f = 1kHz 45 W see Note 1 THD+N = 10%, RL = 4Ω, f = 1kHz 80 W THD+N = 1%, RL = 8Ω, f = 1kHz 35 W THD+N = 1%, RL = 4Ω, f = 1kHz 60 W Output Power per channel (continuous) Without Heatsink, RL = 8Ω, f = 1kHz, PVDD = +22V 30 W see Note 2
POUT (PBTL)
Output Power (peak), see Note 1 THD+N = 10%, RL = 2Ω, f = 1kHz 160 W THD+N = 1%, RL = 2Ω, f= 1kHz 120 W Output Power per channel (peak),
POUT (SE)
THD+N = 10%, RL = 4Ω, f = 1kHz 20 W see Note 1 THD+N = 10%, RL = 3Ω, f = 1kHz 25 W THD+N = 1%, RL = 4Ω, f = 1kHz 15 W THD+N = 1%, RL = 3Ω, f = 1kHz 20 W
TENABLE
Shutdown/Full Operation Timing NENABLE = 1 → 0 1 ms
TMUTE
Mute/Unmute Timing NMUTE = 1 → 0 and 0 → 1 0.3 ms
VOS
Output Offset Voltage ±200 mV
PSRR
Power Supply Rejection Ratio ± 100mVpp ripple voltage 70 dB
Ron
Resistance, switch on 0.10 0.15 0.20 Ω Power Mode A 618 672 726 kHz Power MOSFET Switching
fSW
Power Mode B & C 316 336 356 kHz Frequency, see Note 3 Power Mode D 158 168 178 kHz
fCLK_IO
Clock Output Frequency 2.7151 2.8224 2.9296 MHz
IOUT
Maximum Output Current 8 A
XTalk
Crosstalk BTL, POUT = 1W, f=1kHz, Ch1 & 2 -108 dB
Note 1:
The thermal design of the target application will significantly impact the ability to achieve the peak output power levels for extended time. See “Thermal Characteristics and Test Signals” section for thermal optimization recommendations.
Note 2:
Continuous power measurements were performed on the MA12070/MA12070P proprietary Amplifier EVK without heatsinking at 25⁰C ambient temperature in Power Mode Profile 4.
Note 3:
Power MOSFET switching frequency depends on which properties are assigned to the individual power modes of the device. Detailed information on this can be found in “Power Mode Management” section. Datasheet Please read the Important Notice and Warnings at the end of this document V 1.0
www.infineon.com
page 9 of 88 2018-07-17
Power Mode Profile = 0; VDD (Analog & Digital) = +5V; PVDD = +26V; TA = 0°C to +85°C. Typical values are at TA = +25°C
Symbol Parameter Conditions Min Typ Max Unit
Output Power per channel (peak),
POUT (BTL)
THD+N = 10%, RL Without Heatsink, = 8Ω, f = 1kHz 45 W see Note 1 THD+N = 10%, RL = 4Ω, f = 1kHz 80 W THD+N = 1%, RL = 8Ω, f = 1kHz 35 W THD+N = 1%, RL = 4Ω, f = 1kHz 60 W Output Power per channel (continuous) Without Heatsink, RL = 8Ω, f = 1kHz, PVDD = +22V 30 W see Note 2
POUT (PBTL)
Output Power (peak), see Note 1 THD+N = 10%, RL = 2Ω, f = 1kHz 160 W THD+N = 1%, RL = 2Ω, f= 1kHz 120 W Output Power per channel (peak),
POUT (SE)
THD+N = 10%, RL = 4Ω, f = 1kHz 20 W see Note 1 THD+N = 10%, RL = 3Ω, f = 1kHz 25 W THD+N = 1%, RL = 4Ω, f = 1kHz 15 W THD+N = 1%, RL = 3Ω, f = 1kHz 20 W
TENABLE
Shutdown/Full Operation Timing NENABLE = 1 → 0 1 ms
TMUTE
Mute/Unmute Timing NMUTE = 1 → 0 and 0 → 1 0.3 ms
VOS
Output Offset Voltage ±200 mV
PSRR
Power Supply Rejection Ratio ± 100mVpp ripple voltage 70 dB
Ron
Resistance, switch on 0.10 0.15 0.20 Ω Power Mode A 618 672 726 kHz Power MOSFET Switching
fSW
Power Mode B & C 316 336 356 kHz Frequency, see Note 3 Power Mode D 158 168 178 kHz
fCLK_IO
Clock Output Frequency 2.7151 2.8224 2.9296 MHz
IOUT
Maximum Output Current 8 A
XTalk
Crosstalk BTL, POUT = 1W, f=1kHz, Ch1 & 2 -108 dB
Note 1:
The thermal design of the target application will significantly impact the ability to achieve the peak output power levels for extended time. See “Thermal Characteristics and Test Signals” section for thermal optimization recommendations.
Note 2:
Continuous power measurements were performed on the MA12070/MA12070P proprietary Amplifier EVK without heatsinking at 25⁰C ambient temperature in Power Mode Profile 4.
Note 3:
Power MOSFET switching frequency depends on which properties are assigned to the individual power modes of the device. Detailed information on this can be found in “Power Mode Management” section. Datasheet Please read the Important Notice and Warnings at the end of this document V 1.0
www.infineon.com
page 9 of 88 2018-07-17