Datasheet ADUM7223 (Analog Devices) - 6

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ADuM7223 Data Sheet PACKAGE CHARACTERISTICS Table 3. Parameter Symbol Min Typ Max Unit Test Conditions/Comments
Resistance (Input-to-Output) RI-O 1012 Ω Capacitance (Input-to-Output) CI-O 2.0 pF f = 1 MHz Input Capacitance CI 4.0 pF IC Junction-to-Ambient Thermal Resistance θJA 96.3 °C/W IC Junction-to-Case Thermal Resistance θJC 43.2 °C/W
INSULATION AND SAFETY-RELATED SPECIFICATIONS Table 4. Parameter Symbol Value Unit Test Conditions/Comments
Functional Dielectric Insulation Voltage1 2500 V rms 1 minute duration Minimum External Air Gap (Clearance) L(I01) 3.5 min mm Measured from input terminals to output terminals, shortest distance through air Minimum External Tracking (Creepage) L(I02) 3.5 min mm Measured from input terminals to output terminals, shortest distance path along body Minimum Internal Gap (Internal Clearance) 0.017 min mm Insulation distance through insulation Tracking Resistance (Comparative Tracking Index) CTI >400 V DIN IEC 112/VDE 0303 Part 1 Isolation Group II Material Group (DIN VDE 0110, 1/89, Table 1) 1 Insulation voltage guaranteed by design, not tested in production. Insulation is similar in structure to devices that are tested to 5 kV rms in production.
1.4 RECOMMENDED OPERATING CONDITIONS Table 5. 1.2 Parameter Symbol Min Max Unit W) ( 1
Operating Junction TJ −40 +125 °C
R
Temperature
OWE 0.8
Supply Voltages1 VDD1 3.0 5.5 V
G P
VDDA, VDDB 4.5 18 V
ITIN 0.6
Maximum Input Signal Rise TVIA, TVIB 1 ms
LIM
and Fall Times
FE 0.4 A S
Common-Mode Transient −50 +50 kV/µs Static2
0.2
Common-Mode Transient −25 +25 kV/µs
0
Immunity Dynamic3
0 50 100 150 200
002
AMBIENT TEMPERATURE (ºC)
1740- 1 1 All voltages are relative to their respective ground. See the Applications Figure 2. Thermal Derating Curve Information section for information on immunity to external magnetic fields. 2 Static common-mode transient immunity is defined as the largest dv/dt between GND1 and GNDA/GNDB with inputs held either high or low such that the output voltage remains either above 0.8 × VDD2 for VIA/VIB = high, or 0.8 V for VIA/VIB = low. Operation with transients above recommended levels can cause momentary data upsets. 3 Dynamic common-mode transient immunity is defined as the largest dv/dt between GND1 and GNDA/GNDB with switching edge coincident with the transient test pulse. Operation with transients above recommended levels can cause momentary data upsets. Rev. A | Page 6 of 16 Document Outline Features Applications General Description Functional Block Diagram Table of Contents Revision History Specifications Electrical Characteristics—5 V Operation Electrical Characteristics—3.3 V Operation Package Characteristics Insulation and Safety-Related Specifications Recommended Operating Conditions Absolute Maximum Ratings ESD Caution Pin Configuration and Function Description Typical Performance Characteristics Applications Information Printed Circuit Board (PCB) Layout Propagation Delay-Related Parameters Thermal Limitations and Switch Load Characteristics Output Load Characteristics DC Correctness and Magnetic Field Immunity Power Consumption Insulation Lifetime Outline Dimension Ordering Guide