Datasheet MMBD1501A / MMBD1503A / MMBD1504A / MMBD1505A (ON Semiconductor) - 3
| 制造商 | ON Semiconductor |
| 描述 | High Conductance Low Leakage Diode |
| 页数 / 页 | 7 / 3 — Values are at TA = 25°C unless otherwise noted. Symbol |
| 修订版 | A |
| 文件格式/大小 | PDF / 302 Kb |
| 文件语言 | 英语 |
Values are at TA = 25°C unless otherwise noted. Symbol
该数据表的模型线
文件文字版本
Values are at TA = 25°C unless otherwise noted. Symbol
PD
RJA Parameter Value Unit Power Dissipation 350 mW Thermal Resistance, Junction-to-Ambient 357 C/W Electrical Characteristics
Values are at TA = 25°C unless otherwise noted. Symbol
VR VF Parameter
Breakdown Voltage Forward Voltage IR Reverse Current CT Total Capacitance Conditions Min. Max. Unit IR = 5.0 A 200 IF = 1.0 mA 620 720 mV IF = 10 mA 720 830 mV V IF = 50 mA 800 890 mV IF = 100 mA 830 930 mV IF = 200 mA 0.87 1.10 V IF = 300 mA 0.90 1.15 V VR = 125 V 1.0 nA VR = 125 V, TA = 150°C 3.0 A VR = 180 V 10.0 nA VR = 180 V, TA = 150°C 5.0 A VR = 0, f = 1.0 MHz 4.0 pF © 1993 Fairchild Semiconductor Corporation
MMBD1501A / MMBD1503A / MMBD1504A / MMBD1505A Rev. 2.6 www.fairchildsemi.com
2 MMBD1501A / MMBD1503A / MMBD1504A / MMBD1505A — Small Signal Diodes Thermal Characteristics
PD
RJA Parameter Value Unit Power Dissipation 350 mW Thermal Resistance, Junction-to-Ambient 357 C/W Electrical Characteristics
Values are at TA = 25°C unless otherwise noted. Symbol
VR VF Parameter
Breakdown Voltage Forward Voltage IR Reverse Current CT Total Capacitance Conditions Min. Max. Unit IR = 5.0 A 200 IF = 1.0 mA 620 720 mV IF = 10 mA 720 830 mV V IF = 50 mA 800 890 mV IF = 100 mA 830 930 mV IF = 200 mA 0.87 1.10 V IF = 300 mA 0.90 1.15 V VR = 125 V 1.0 nA VR = 125 V, TA = 150°C 3.0 A VR = 180 V 10.0 nA VR = 180 V, TA = 150°C 5.0 A VR = 0, f = 1.0 MHz 4.0 pF © 1993 Fairchild Semiconductor Corporation
MMBD1501A / MMBD1503A / MMBD1504A / MMBD1505A Rev. 2.6 www.fairchildsemi.com
2 MMBD1501A / MMBD1503A / MMBD1504A / MMBD1505A — Small Signal Diodes Thermal Characteristics