Datasheet FDN335N (ON Semiconductor) - 2
| 制造商 | ON Semiconductor |
| 描述 | N-Channel 2.5V Specified PowerTrench™ MOSFET 20V, 1.7A, 70mΩ |
| 页数 / 页 | 5 / 2 — FDN335N. Electrical Characteristics. Symbol. Parameter. Test Conditions. … |
| 修订版 | 3 |
| 文件格式/大小 | PDF / 203 Kb |
| 文件语言 | 英语 |
FDN335N. Electrical Characteristics. Symbol. Parameter. Test Conditions. Min. Typ. Max. Units. Off Characteristics. On Characteristics
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文件文字版本
FDN335N Electrical Characteristics
T = 25°C unless otherwise noted A
Symbol Parameter Test Conditions Min Typ Max Units Off Characteristics
BVDSS Drain-Source Breakdown Voltage VGS = 0 V, ID = 250 µA 20 V ∆BVDSS Breakdown Voltage Temperature ID = 250 µA,Referenced to 25°C 14 mV/°C ∆TJ Coefficient IDSS Zero Gate Voltage Drain Current VDS = 16 V, VGS = 0 V 1 µA IGSSF Gate-Body Leakage Current, VGS = 8 V, VDS = 0 V 100 nA Forward IGSSR Gate-Body Leakage Current, VGS = -8 V, VDS = 0 V -100 nA Reverse
On Characteristics
(Note 2) VGS(th) Gate Threshold Voltage VDS = VGS, ID = 250 µA 0.4 0.9 1.5 V ∆VGS(th) Gate Threshold Voltage ID = 250 µA,Referenced to 25°C -3 mV/°C ∆TJ Temperature Coefficient RDS(ON) Static Drain-Source VGS = 4.5 V, ID = 1.7 A 0.055 0.070 Ω On-Resistance VGS = 4.5 V, ID = 1.7 A,TJ = 125°C 0.079 0.120 VGS = 2.5 V, ID = 1.5 A 0.078 0.100 ID(on) On-State Drain Current VGS = 4.5 V, VDS = 5 V 8 A gFS Forward Transconductance VDS = 5 V, ID = 1.5 A 7 S
Dynamic Characteristics
Ciss Input Capacitance VDS = 10 V, VGS = 0 V, 310 pF C f = 1.0 MHz oss Output Capacitance 80 pF Crss Reverse Transfer Capacitance 40 pF
Switching Characteristics
(Note 2) td(on) Turn-On Delay Time VDD = 10 V, ID = 1 A, 5 15 ns t VGS = 4.5 V, RGEN = 6 Ω r Turn-On Rise Time 8.5 17 ns td(off) Turn-Off Delay Time 11 20 ns tf Turn-Off Fall Time 3 10 ns Qg Total Gate Charge VDS = 10 V, ID = 1.7 A, 3.5 5 nC Q VGS = 4.5 V, gs Gate-Source Charge 0.55 nC Qgd Gate-Drain Charge 0.95 nC
Drain-Source Diode Characteristics and Maximum Ratings
IS Maximum Continuous Drain-Source Diode Forward Current 0.42 A VSD Drain-Source Diode Forward VGS = 0 V, IS = 0.42 A (Note 2) 0.7 1.2 V Voltage
Notes: 1:
Rθ is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting JA surface of the drain pins. Rθ is guaranteed by design while R is determined by the user's board design. JC θCA a) 250°C/W when b) 270°C/W when mounted mounted on a 0.02 in2 on a minimum pad. Pad of 2 oz. Cu. Scale 1 : 1 on letter size paper
2:
Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2.0% www.onsemi.com 2
T = 25°C unless otherwise noted A
Symbol Parameter Test Conditions Min Typ Max Units Off Characteristics
BVDSS Drain-Source Breakdown Voltage VGS = 0 V, ID = 250 µA 20 V ∆BVDSS Breakdown Voltage Temperature ID = 250 µA,Referenced to 25°C 14 mV/°C ∆TJ Coefficient IDSS Zero Gate Voltage Drain Current VDS = 16 V, VGS = 0 V 1 µA IGSSF Gate-Body Leakage Current, VGS = 8 V, VDS = 0 V 100 nA Forward IGSSR Gate-Body Leakage Current, VGS = -8 V, VDS = 0 V -100 nA Reverse
On Characteristics
(Note 2) VGS(th) Gate Threshold Voltage VDS = VGS, ID = 250 µA 0.4 0.9 1.5 V ∆VGS(th) Gate Threshold Voltage ID = 250 µA,Referenced to 25°C -3 mV/°C ∆TJ Temperature Coefficient RDS(ON) Static Drain-Source VGS = 4.5 V, ID = 1.7 A 0.055 0.070 Ω On-Resistance VGS = 4.5 V, ID = 1.7 A,TJ = 125°C 0.079 0.120 VGS = 2.5 V, ID = 1.5 A 0.078 0.100 ID(on) On-State Drain Current VGS = 4.5 V, VDS = 5 V 8 A gFS Forward Transconductance VDS = 5 V, ID = 1.5 A 7 S
Dynamic Characteristics
Ciss Input Capacitance VDS = 10 V, VGS = 0 V, 310 pF C f = 1.0 MHz oss Output Capacitance 80 pF Crss Reverse Transfer Capacitance 40 pF
Switching Characteristics
(Note 2) td(on) Turn-On Delay Time VDD = 10 V, ID = 1 A, 5 15 ns t VGS = 4.5 V, RGEN = 6 Ω r Turn-On Rise Time 8.5 17 ns td(off) Turn-Off Delay Time 11 20 ns tf Turn-Off Fall Time 3 10 ns Qg Total Gate Charge VDS = 10 V, ID = 1.7 A, 3.5 5 nC Q VGS = 4.5 V, gs Gate-Source Charge 0.55 nC Qgd Gate-Drain Charge 0.95 nC
Drain-Source Diode Characteristics and Maximum Ratings
IS Maximum Continuous Drain-Source Diode Forward Current 0.42 A VSD Drain-Source Diode Forward VGS = 0 V, IS = 0.42 A (Note 2) 0.7 1.2 V Voltage
Notes: 1:
Rθ is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting JA surface of the drain pins. Rθ is guaranteed by design while R is determined by the user's board design. JC θCA a) 250°C/W when b) 270°C/W when mounted mounted on a 0.02 in2 on a minimum pad. Pad of 2 oz. Cu. Scale 1 : 1 on letter size paper
2:
Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2.0% www.onsemi.com 2