Datasheet FDN335N (ON Semiconductor) - 3
| 制造商 | ON Semiconductor |
| 描述 | N-Channel 2.5V Specified PowerTrench™ MOSFET 20V, 1.7A, 70mΩ |
| 页数 / 页 | 5 / 3 — FDN335N. Typical Characteristics. , NORMALIZED. , DRAIN CURRENT (A). … |
| 修订版 | 3 |
| 文件格式/大小 | PDF / 203 Kb |
| 文件语言 | 英语 |
FDN335N. Typical Characteristics. , NORMALIZED. , DRAIN CURRENT (A). DS(ON). I D. DRAIN-SOURCE ON-RESISTANCE
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FDN335N Typical Characteristics
10 2.2 VGS = 4.5V 3.0V 2.5V V 3.5V 2 GS = 2.0V 8 1.8 6 1.6 2.0V 2.5V 4 1.4
, NORMALIZED
3.0V
, DRAIN CURRENT (A) DS(ON)
1.2 3.5V
I D R
2 4.0V 1 4.5V 1.5V
DRAIN-SOURCE ON-RESISTANCE
0 0.8 0 0.5 1 1.5 2 2.5 3 0 2 4 6 8 10
VDS, DRAIN TO SOURCE VOLTAGE (V) ID, DRAIN CURRENT (A) Figure 1. On-Region Characteristics. Figure 2. On-Resistance Variation with Drain Current and Gate Voltage.
0.24 1.6 I I D = 1.7A D = 0.85A VGS = 4.5V 0.2 1.4 0.16 1.2 0.12
, NORMALIZED
T 1 A = 125oC 0.08
DS(ON) , ON-RESISTANCE (OHM) R
0.8
DS(ON)
0.04 TA = 25oC
R DRAIN-SOURCE ON-RESISTANCE
0.6 0 -50 -25 0 25 50 75 100 125 150 1 2 3 4 5
TJ, JUNCTION TEMPERATURE (oC) VGS, GATE TO SOURCE VOLTAGE (V) Figure 3. On-Resistance Variation Figure 4. On-Resistance Variation with Temperature. with Gate-to-Source Voltage.
10 10 V V DS = 5V TA = -55oC 25oC GS = 0V 125oC 8 1 TA = 125oC 6 0.1 25oC -55oC 4 0.01
, DRAIN CURRENT (A) I D
2 0.001
, REVERSE DRAIN CURRENT (A) I S
0 0.0001 0 1 2 3 4 0 0.2 0.4 0.6 0.8 1 1.2 1.4
V VSD, BODY DIODE FORWARD VOLTAGE (V) GS, GATE TO SOURCE VOLTAGE (V) Figure 5. Transfer Characteristics. Figure 6. Body Diode Forward Voltage Variation with Source Current and Temperature.
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10 2.2 VGS = 4.5V 3.0V 2.5V V 3.5V 2 GS = 2.0V 8 1.8 6 1.6 2.0V 2.5V 4 1.4
, NORMALIZED
3.0V
, DRAIN CURRENT (A) DS(ON)
1.2 3.5V
I D R
2 4.0V 1 4.5V 1.5V
DRAIN-SOURCE ON-RESISTANCE
0 0.8 0 0.5 1 1.5 2 2.5 3 0 2 4 6 8 10
VDS, DRAIN TO SOURCE VOLTAGE (V) ID, DRAIN CURRENT (A) Figure 1. On-Region Characteristics. Figure 2. On-Resistance Variation with Drain Current and Gate Voltage.
0.24 1.6 I I D = 1.7A D = 0.85A VGS = 4.5V 0.2 1.4 0.16 1.2 0.12
, NORMALIZED
T 1 A = 125oC 0.08
DS(ON) , ON-RESISTANCE (OHM) R
0.8
DS(ON)
0.04 TA = 25oC
R DRAIN-SOURCE ON-RESISTANCE
0.6 0 -50 -25 0 25 50 75 100 125 150 1 2 3 4 5
TJ, JUNCTION TEMPERATURE (oC) VGS, GATE TO SOURCE VOLTAGE (V) Figure 3. On-Resistance Variation Figure 4. On-Resistance Variation with Temperature. with Gate-to-Source Voltage.
10 10 V V DS = 5V TA = -55oC 25oC GS = 0V 125oC 8 1 TA = 125oC 6 0.1 25oC -55oC 4 0.01
, DRAIN CURRENT (A) I D
2 0.001
, REVERSE DRAIN CURRENT (A) I S
0 0.0001 0 1 2 3 4 0 0.2 0.4 0.6 0.8 1 1.2 1.4
V VSD, BODY DIODE FORWARD VOLTAGE (V) GS, GATE TO SOURCE VOLTAGE (V) Figure 5. Transfer Characteristics. Figure 6. Body Diode Forward Voltage Variation with Source Current and Temperature.
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