Datasheet FDN335N (ON Semiconductor) - 4

FDN335N Typical Characteristics
(continued) 5 500 f = 1MHz ID = 1.7A VDS = 5V VGS = 0 V 4 400 10V 15V CISS 3 300 2 200
CAPACITANCE (pF)
1 100
, GATE-SOURCE VOLTAGE (V)
COSS
GSV
CRSS 0 0 0 0.5 1 1.5 2 2.5 3 3.5 4 0 4 8 12 16 20
Q V g, GATE CHARGE (nC) DS, DRAIN TO SOURCE VOLTAGE (V) Figure 7. Gate Charge Characteristics. Figure 8. Capacitance Characteristics.
10 20 1ms SINGLE PULSE RDS(ON) LIMIT o R C/W 16 θJA=270 o 10ms TA=25 C 1
)
100ms
W
12
(
1s
R E
10s
W
DC 8 VGS = 4.5V
PO
0.1 SINGLE PULSE
, DRAIN CURRENT (A) I D
RθJA = 270oC/W 4 TA = 25oC 0.01 0 0.1 1 10 100 0.0001 0.001 0.01 0.1 1 10 100 1000
VDS, DRAIN-SOURCE VOLTAGE (V) SINGLE PULSE TIME (SEC) Figure 9. Maximum Safe Operating Area. Figure 10. Single Pulse Maximum Power Dissipation.
1 E D = 0.5 C 0.5 N A IVE 0.2 T 0.2 IST R (t) = r(t) * R θJA θJA EC ES 0.1 F 0.1 R = 270 °C/W θJA R EF AL 0.05 0.05 ED M 0.02 P(pk) IZ ER 0.02 0.01 AL H M T t R T 0.01 1 Single Pulse O N t 2 E 0.005 ), N SI T - T = P * R (t) J A θJA r(t AN R 0.002 Duty Cycle, D = t /t 1 2 T 0.001 0.0001 0.001 0.01 0.1 1 10 100 300 t , TIME (sec) 1
Figure 11. Transient Thermal Response Curve.
Thermal characterization performed using the conditions described in Note 1b. Transient themal response will change depending on the circuit board design. www.onsemi.com 4