Datasheet IXTA3N50D2, IXTP3N50D2 (IXYS)

Depletion Mode IXTA3N50D2 V = 500V DSX MOSFET IXTP3N50D2 I > 3A D(on) R

1.5 DS(on) N-Channel D G TO-263 AA (IXTA) S
G S D (Tab)
Symbol Test Conditions Maximum Ratings TO-220AB (IXTP) V
T = 25C to 150C 500 V
DSX
J
V
Continuous 20 V
GSX V
Transient 30 V
GSM P
T = 25C 125 W
D
C G D D (Tab)
T
- 55 ... +150 C S
J T
150 C
JM T
- 55 ... +150 C
stg
G = Gate D = Drain
T
Maximum Lead Temperature for Soldering 300 °C S = Source Tab = Drain
L T
1.6 mm (0.062in.) from Case for 10s 260 °C
SOLD M
Mounting Torque (TO-220) 1.13 / 10 Nm/lb.in
d Features Weight
TO-263 2.5 g TO-220 3.0 g • Normally ON Mode • International Standard Packages • Molding Epoxies Meet UL 94 V-0 Flammability Classification
Advantages Symbol Test Conditions Characteristic Values
(T = 25C, Unless Otherwise Specified)
Min. Typ. Max.
• Easy to Mount J • Space Savings
BV
V = - 5V, I = 250A 500 V • High Power Density
DSX
GS D
V
V = 25V, I = 250A - 2.0 - 4.5 V
GS(off)
DS D
I
V = 20V, V = 0V 100 nA
Applications GSX
GS DS
I
V = V , V = - 5V 5 A • Audio Amplifiers
DSX(off)
DS DSX GS T = 125C 50 A • Start-up Circuits J • Protection Circuits
R
V = 0V, I = 1.5A, Note 1 1.5
DS(on)
GS D • Ramp Generators
I
V = 0V, V = 25V, Note 1 3 A • Current Regulators
D(on)
GS DS • Active Loads © 2017 IXYS CORPORATION, All Rights Reserved DS100148D(4/17)