Datasheet IRF541 (Inchange Semiconductor) - 2

INCHANGE Semiconductor isc Product Specification isc N-Channel Mosfet Transistor IRF541 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN MAX UNIT
V(BR)DSS Drain-Source Breakdown Voltage VGS= 0; ID= 0.25mA 80 V VGS(th) Gate Threshold Voltage VDS= VGS; ID= 0.25mA 2 4 V RDS(on) Drain-Source On-Resistance VGS= 10V; ID= 17A 0.077 Ω IGSS Gate-Body Leakage Current VGS= ±20V;VDS= 0 ±500 nA IDSS Zero Gate Voltage Drain Current VDS= 80V; VGS=0 250 uA VSD Forward On-Voltage IS= 27A; VGS=0 2.5 V Ciss Input Capacitance 1600 pF VDS=25V,VGS=0V, Coss Output Capacitance 800 pF F=1.0MHz Crss Reverse Transfer Capacitance 300 pF
·SWITCHING CHARACTERISTICS (TC=25℃) SYMBOL PARAMETER CONDITIONS MIN TYP MAX UNIT
Td(on) Turn-on Delay Time 15 23 ns Tr Rise Time 70 110 ns VDD=50V,ID=28A VGS=10V,RGEN=9.1Ω RGS=9.1Ω Td(off) Turn-off Delay Time 40 60 ns Tf Fall Time 50 75 ns
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