Datasheet SI4480EY (Vishay) - 4
制造商 | Vishay |
描述 | N-Channel 80-V (D-S) MOSFET |
页数 / 页 | 5 / 4 — Si4480EY. Vishay Siliconix. Threshold Voltage. Single Pulse Power. … |
文件格式/大小 | PDF / 53 Kb |
文件语言 | 英语 |
Si4480EY. Vishay Siliconix. Threshold Voltage. Single Pulse Power. Normalized Thermal Transient Impedance, Junction-to-Ambient
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Si4480EY Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Threshold Voltage Single Pulse Power
0.5 50 40 0.0 ID = 250 mA 30 ariance (V) - 0.5 V Power (W) 20 GS(th)V - 1.0 10 - 1.5 0 - 50 - 25 0 25 50 75 100 125 150 175 10-1 10-2 1 10 100 600 T Time (sec) J - Temperature (_C)
Normalized Thermal Transient Impedance, Junction-to-Ambient
2 1 Duty Cycle = 0.5 ransient T 0.2 Notes: fective 0.1 0.1 PDM Thermal Impedance 0.05 t1 t2 Normalized Ef t1 0.02 1. Duty Cycle, D = t2 2. Per Unit Base = RthJA = 85_C/W 3. T (t) JM - TA = PDMZthJA Single Pulse 4. Surface Mounted 0.01 10-3 10-2 10-1 10-4 1 10 100 600 Square Wave Pulse Duration (sec)
Normalized Thermal Transient Impedance, Junction-to-Foot
1 0.5 0.2 0.1 0.1 0.05 ransient T 0.02 fective 0.01 Single Pulse Thermal Impedance Normalized Ef 0.001 0.0001 10-3 10-2 10-1 10-4 1 10 100 Square Wave Pulse Duration (sec) www.vishay.com Document Number: 71060
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S-03951—Rev. B, 26-May-03 Document Outline Datasheet Disclaimer Datasheet Disclaimer