Datasheet IRF7832 (International Rectifier) - 6

制造商International Rectifier
描述HEXFET Power MOSFET
页数 / 页10 / 6 — Fig 12a. Fig 12c. Fig 12b. Fig 14a. Fig 13. Fig 14b
文件格式/大小PDF / 193 Kb
文件语言英语

Fig 12a. Fig 12c. Fig 12b. Fig 14a. Fig 13. Fig 14b

Fig 12a Fig 12c Fig 12b Fig 14a Fig 13 Fig 14b

该数据表的模型线

文件文字版本

IRF7832 600 15V ) J m( I D y 500 gr TOP 7.0A L DRIVER e 13A VDS n E BOTTOM 16A e 400 h c R n G D.U.T + a V l - DD a IAS A v 300 A 20V V GS e t 0.01Ω p sl u P 200 e
Fig 12a.
Unclamped Inductive Test Circuit l g ni S , 100 S V(BR)DSS AE tp 0 25 50 75 100 125 150 Starting TJ , Junction Temperature (°C)
Fig 12c.
Maximum Avalanche Energy Vs. Drain Current IAS LD VDS
Fig 12b.
Unclamped Inductive Waveforms VDD D.U.T Current Regulator VGS Same Type as D.U.T. Pulse Width < 1µs Duty Factor < 0.1% 50KΩ .2µF 12V .3µF
Fig 14a.
Switching Time Test Circuit +V D.U.T. DS - VDS 90% VGS 3mA 10% VGS I I G D td(on) tr td(off) tf Current Sampling Resistors
Fig 13.
Gate Charge Test Circuit
Fig 14b.
Switching Time Waveforms 6 www.irf.com