Datasheet SQD50N06-09L (Vishay) - 4
| 制造商 | Vishay |
| 描述 | Automotive N-Channel 60 V (D-S) 175 °C MOSFET |
| 页数 / 页 | 9 / 4 — SQD50N06-09L. TYPICAL CHARACTERISTICS. Gate Charge. On-Resistance vs. … |
| 文件格式/大小 | PDF / 163 Kb |
| 文件语言 | 英语 |
SQD50N06-09L. TYPICAL CHARACTERISTICS. Gate Charge. On-Resistance vs. Junction Temperature. Source Drain Diode Forward Voltage
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SQD50N06-09L
www.vishay.com Vishay Siliconix
TYPICAL CHARACTERISTICS
(TA = 25 °C, unless otherwise noted) 10 2.5 ID = 50 A ID = 20 A 8 2.1 VDS = 30 V VGS = 10 V tance is 6 s 1.7 ource Voltage (V) S V 4 - On-Re (Normalized) 1.3 GS = 4.5 V ate-to- (on) S G DR - GS 2 V 0.9 0 0.5 0 10 20 30 40 50 - 50 - 25 0 25 50 75 100 125 150 175 Q - Total Gate Charge (nC) T - Junction Temperature (°C) g J
Gate Charge On-Resistance vs. Junction Temperature
100 0.05 10 0.04 ) Ω TJ = 150 °C 1 tance ( 0.03 is s TJ = 25 °C ource Current (A) 0.1 0.02 S - On-Re T - J = 125 °C (on) I S S DR 0.01 0.01 TJ = 25 °C 0.001 0 0 0.2 0.4 0.6 0.8 1.0 1.2 0 2 4 6 8 10 V - Source-to-Drain Voltage (V) V - Gate-to-Source Voltage (V) SD GS
Source Drain Diode Forward Voltage On-Resistance vs. Gate-to-Source Voltage
0.5 75 ID = 10 mA ) 0.1 (V 72 oltage V - 0.3 69 ID = 5 mA Variance (V) -Source (th) - 0.7 -to 66 GSV Drain ID = 250 μA - - 1.1 DS 63 V - 1.5 60 - 50 - 25 0 25 50 75 100 125 150 175 - 50 - 25 0 25 50 75 100 125 150 175 T - Temperature (°C) T J J - Junction Temperature (°C)
Threshold Voltage Drain Source Breakdown vs. Junction Temperature
S11-2065-Rev. B, 24-Oct-11
4
Document Number: 68901 THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
www.vishay.com Vishay Siliconix
TYPICAL CHARACTERISTICS
(TA = 25 °C, unless otherwise noted) 10 2.5 ID = 50 A ID = 20 A 8 2.1 VDS = 30 V VGS = 10 V tance is 6 s 1.7 ource Voltage (V) S V 4 - On-Re (Normalized) 1.3 GS = 4.5 V ate-to- (on) S G DR - GS 2 V 0.9 0 0.5 0 10 20 30 40 50 - 50 - 25 0 25 50 75 100 125 150 175 Q - Total Gate Charge (nC) T - Junction Temperature (°C) g J
Gate Charge On-Resistance vs. Junction Temperature
100 0.05 10 0.04 ) Ω TJ = 150 °C 1 tance ( 0.03 is s TJ = 25 °C ource Current (A) 0.1 0.02 S - On-Re T - J = 125 °C (on) I S S DR 0.01 0.01 TJ = 25 °C 0.001 0 0 0.2 0.4 0.6 0.8 1.0 1.2 0 2 4 6 8 10 V - Source-to-Drain Voltage (V) V - Gate-to-Source Voltage (V) SD GS
Source Drain Diode Forward Voltage On-Resistance vs. Gate-to-Source Voltage
0.5 75 ID = 10 mA ) 0.1 (V 72 oltage V - 0.3 69 ID = 5 mA Variance (V) -Source (th) - 0.7 -to 66 GSV Drain ID = 250 μA - - 1.1 DS 63 V - 1.5 60 - 50 - 25 0 25 50 75 100 125 150 175 - 50 - 25 0 25 50 75 100 125 150 175 T - Temperature (°C) T J J - Junction Temperature (°C)
Threshold Voltage Drain Source Breakdown vs. Junction Temperature
S11-2065-Rev. B, 24-Oct-11
4
Document Number: 68901 THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000