Datasheet TSCR400CX6, TSCR402CX6 (Taiwan Semiconductor) - 4

TSCR400CX6 / TSCR402CX6
Taiwan Semiconductor
TSCR400CX6 CHARACTERISTICS CURVES
100 1.2
R = 710
Ω
EXT
1.1 10
) A ) A (m
1
T (m T I OU
1
I OU
0.9 0 0.8 0 0 1 10 100 -40 -20 0 20 40 60 80
R T EXT (kΩ) A (
℃
) Figure 1. IOUT vs. REXT Figure 2. IOUT vs. TA (REXT=710Ω)
0.75 1,000 0.7 100
(V) ) A
0.65
OP
10
R (m DV I C
0.6 1 0.55 0 0 1 10 100 1,000 1 10 100 1,000
IC (mA) REXT (Ω) Figure 3. VDROP vs IC Figure 4. VEN vs IOUT (REXT=open) V Collector Current I DROP = f(IC) refer to stabilized NPN Transistor C = f(REXT) refer to stabilized NPN Transistor
1,000 1.2 2.1Ω 5.3Ω 1 100
(W)
13Ω 0.8
) A ation p
10 69Ω 0.6
(m ssi I C Dir
0.4
e
750Ω 1
Pow
0.2 4.3kΩ 0 0 0 20 40 60 80 100 120 140 160 0 2 4 6 8 10
Vs(V) Ambient Temperature (
℃
) Figure 5. IC vs. VS (Parameter REXT=(Ω)) Figure 6. PD vs. Ambient Temperature Collector Current IC = f(VS) refer to stabilized NPN Transistor
4 Version: B1708