Datasheet IRF9510S, SiHF9510S (Vishay) - 3
| 制造商 | Vishay |
| 描述 | Power MOSFET |
| 页数 / 页 | 9 / 3 — IRF9510S, SiHF9510S. TYPICAL CHARACTERISTICS. Fig. 1 - Typical Output … |
| 文件格式/大小 | PDF / 179 Kb |
| 文件语言 | 英语 |
IRF9510S, SiHF9510S. TYPICAL CHARACTERISTICS. Fig. 1 - Typical Output Characteristics, TC = 25 °C
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IRF9510S, SiHF9510S
Vishay Siliconix
TYPICAL CHARACTERISTICS
(25 °C, unless otherwise noted) VGS 101 Top - 15 V - 10 V 101 - 8.0 V - 7.0 V - 6.0 V - 5.5 V 25 °C - 5.0 V Bottom - 4.5 V 175 °C ain Current (A) ain Current (A) , Dr , Dr 100 D 100 - 4.5 V D - I - I 20 µs Pulse Width 20 µs Pulse Width T = 25 °C V = - 50 V C DS 100 101 4 5 6 7 8 9 10 91073_01 - VDS, Drain-to-Source Voltage (V) 91073_03 - VGS, Gate-to-Source Voltage (V)
Fig. 1 - Typical Output Characteristics, TC = 25 °C Fig. 3 - Typical Transfer Characteristics
3.0 VGS I = 8.0 A D Top 15 V V = 10 V GS 101 10 V 2.5 8.0 V 7.0 V 2.0 6.0 V 5.5 V ed) 4.5 V 5.0 V 1.5 Bottom 4.5 V maliz ain Current (A) (Nor 1.0 , Dr I D ain-to-Source On Resistance 100 , Dr 0.5 20 µs Pulse Width T = 150 °C C DS(on) 0.0 R 100 101 - 60 - 40 - 20 0 20 40 60 80 100 120 140 160 91071_02 VDS, Drain-to-Source Voltage (V) 91071_04 TJ, Junction Temperature (°C)
Fig. 2 - Typical Output Characteristics, TC = 175 °C Fig. 4 - Normalized On-Resistance vs. Temperature
Document Number: 91073 www.vishay.com S11-1050-Rev. C, 30-May-11 3 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Vishay Siliconix
TYPICAL CHARACTERISTICS
(25 °C, unless otherwise noted) VGS 101 Top - 15 V - 10 V 101 - 8.0 V - 7.0 V - 6.0 V - 5.5 V 25 °C - 5.0 V Bottom - 4.5 V 175 °C ain Current (A) ain Current (A) , Dr , Dr 100 D 100 - 4.5 V D - I - I 20 µs Pulse Width 20 µs Pulse Width T = 25 °C V = - 50 V C DS 100 101 4 5 6 7 8 9 10 91073_01 - VDS, Drain-to-Source Voltage (V) 91073_03 - VGS, Gate-to-Source Voltage (V)
Fig. 1 - Typical Output Characteristics, TC = 25 °C Fig. 3 - Typical Transfer Characteristics
3.0 VGS I = 8.0 A D Top 15 V V = 10 V GS 101 10 V 2.5 8.0 V 7.0 V 2.0 6.0 V 5.5 V ed) 4.5 V 5.0 V 1.5 Bottom 4.5 V maliz ain Current (A) (Nor 1.0 , Dr I D ain-to-Source On Resistance 100 , Dr 0.5 20 µs Pulse Width T = 150 °C C DS(on) 0.0 R 100 101 - 60 - 40 - 20 0 20 40 60 80 100 120 140 160 91071_02 VDS, Drain-to-Source Voltage (V) 91071_04 TJ, Junction Temperature (°C)
Fig. 2 - Typical Output Characteristics, TC = 175 °C Fig. 4 - Normalized On-Resistance vs. Temperature
Document Number: 91073 www.vishay.com S11-1050-Rev. C, 30-May-11 3 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000