Datasheet IRF9510S, SiHF9510S (Vishay) - 8

制造商Vishay
描述Power MOSFET
页数 / 页9 / 8 — Package Information. TO-263AB (HIGH VOLTAGE). MILLIMETERS. INCHES. DIM. …
文件格式/大小PDF / 179 Kb
文件语言英语

Package Information. TO-263AB (HIGH VOLTAGE). MILLIMETERS. INCHES. DIM. MIN. MAX. Notes

Package Information TO-263AB (HIGH VOLTAGE) MILLIMETERS INCHES DIM MIN MAX Notes

该数据表的模型线

文件文字版本

Package Information
Vishay Siliconix
TO-263AB (HIGH VOLTAGE)
A (Datum A) 3 4 A A B E c2 H 4 L1 4 Gauge plane 0° to 8° B 5 D Detail A Seating plane H C C L L3 A1 1 2 3 L4 Detail “A” L2 Rotated 90° CW B B scale 8:1 A 2 x b2 2 x b c E 0.010 M A M B ± 0.004 M B 2 x e Base 5 metal D1 Plating 4 b1, b3 (c) c1 5 (b, b2) Lead tip Section B - B and C - C E1 4 Scale: none View A - A
MILLIMETERS INCHES MILLIMETERS INCHES DIM. MIN. MAX. MIN. MAX. DIM. MIN. MAX. MIN. MAX.
A 4.06 4.83 0.160 0.190 D1 6.86 - 0.270 - A1 0.00 0.25 0.000 0.010 E 9.65 10.67 0.380 0.420 b 0.51 0.99 0.020 0.039 E1 6.22 - 0.245 - b1 0.51 0.89 0.020 0.035 e 2.54 BSC 0.100 BSC b2 1.14 1.78 0.045 0.070 H 14.61 15.88 0.575 0.625 b3 1.14 1.73 0.045 0.068 L 1.78 2.79 0.070 0.110 c 0.38 0.74 0.015 0.029 L1 - 1.65 - 0.066 c1 0.38 0.58 0.015 0.023 L2 - 1.78 - 0.070 c2 1.14 1.65 0.045 0.065 L3 0.25 BSC 0.010 BSC D 8.38 9.65 0.330 0.380 L4 4.78 5.28 0.188 0.208 ECN: S-82110-Rev. A, 15-Sep-08 DWG: 5970
Notes
1. Dimensioning and tolerancing per ASME Y14.5M-1994. 2. Dimensions are shown in millimeters (inches). 3. Dimension D and E do not include mold flash. Mold flash shall not exceed 0.127 mm (0.005") per side. These dimensions are measured at the outmost extremes of the plastic body at datum A. 4. Thermal PAD contour optional within dimension E, L1, D1 and E1. 5. Dimension b1 and c1 apply to base metal only. 6. Datum A and B to be determined at datum plane H. 7. Outline conforms to JEDEC outline to TO-263AB. Document Number: 91364 www.vishay.com Revision: 15-Sep-08 1