Datasheet MMBT2222A, PZT2222A (ON Semiconductor) - 3
| 制造商 | ON Semiconductor |
| 描述 | (Legacy Fairchild) NPN General Purpose Amplifier |
| 页数 / 页 | 10 / 3 — Values are at TA = 25°C unless otherwise noted. Symbol |
| 修订版 | A |
| 文件格式/大小 | PDF / 388 Kb |
| 文件语言 | 英语 |
Values are at TA = 25°C unless otherwise noted. Symbol
该数据表的模型线
文件文字版本
Values are at TA = 25°C unless otherwise noted. Symbol
PD
RθJA Max. Parameter Unit MMBT2222A(3) PZT2222A(4) Total Device Dissipation 350 1000 mW Derate Above 25°C 2.8 8.0 mW/°C Thermal Resistance, Junction to Ambient 357 125 °C/W Notes:
3. Device is mounted on FR-4 PCB 1.6 inch x 1.6 inch x 0.06 inch.
4. Device is mounted on FR-4 PCB 36 mm x 18 mm x 1.5 mm, mounting pad for the collector lead minimum 6 cm2. © 2004 Fairchild Semiconductor Corporation
MMBT2222A / PZT2222A Rev. 1.1.0 www.fairchildsemi.com
2 MMBT2222A / PZT2222A — NPN General-Purpose Amplifier Thermal Characteristics
PD
RθJA Max. Parameter Unit MMBT2222A(3) PZT2222A(4) Total Device Dissipation 350 1000 mW Derate Above 25°C 2.8 8.0 mW/°C Thermal Resistance, Junction to Ambient 357 125 °C/W Notes:
3. Device is mounted on FR-4 PCB 1.6 inch x 1.6 inch x 0.06 inch.
4. Device is mounted on FR-4 PCB 36 mm x 18 mm x 1.5 mm, mounting pad for the collector lead minimum 6 cm2. © 2004 Fairchild Semiconductor Corporation
MMBT2222A / PZT2222A Rev. 1.1.0 www.fairchildsemi.com
2 MMBT2222A / PZT2222A — NPN General-Purpose Amplifier Thermal Characteristics