Datasheet PZT2222A (ON Semiconductor) - 2
| 制造商 | ON Semiconductor |
| 描述 | NPN Bipolar Transistor |
| 页数 / 页 | 7 / 2 — PZT2222A. ELECTRICAL CHARACTERISTICS. Characteristic. Symbol. Min. Max. … |
| 修订版 | 11 |
| 文件格式/大小 | PDF / 176 Kb |
| 文件语言 | 英语 |
PZT2222A. ELECTRICAL CHARACTERISTICS. Characteristic. Symbol. Min. Max. Unit. OFF CHARACTERISTICS. ON CHARACTERISTICS
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PZT2222A ELECTRICAL CHARACTERISTICS
(TA = 25°C unless otherwise noted)
Characteristic Symbol Min Max Unit OFF CHARACTERISTICS
Collector−Emitter Breakdown Voltage (IC = 10 mAdc, IB = 0) V(BR)CEO 40 − Vdc Collector−Base Breakdown Voltage (IC = 10 mAdc, IE = 0) V(BR)CBO °75° − Vdc Emitter−Base Breakdown Voltage (IE = 10 mAdc, IC = 0) V(BR)EBO 6.0 − Vdc Base−Emitter Cutoff Current (VCE = 60 Vdc, VBE = − 3.0 Vdc) IBEX − 20 nAdc Collector−Emitter Cutoff Current (VCE = 60 Vdc, VBE = − 3.0 Vdc) ICEX − 10 nAdc Emitter−Base Cutoff Current (VEB = 3.0 Vdc, IC = 0) IEBO − 100 nAdc Collector−Base Cutoff Current ICBO (VCB = 60 Vdc, IE = 0) − 10 nAdc (VCB = 60 Vdc, IE = 0, TA = 125°C) − 10 mAdc
ON CHARACTERISTICS
DC Current Gain hFE − (IC = 0.1 mAdc, VCE = 10 Vdc) 35 − (IC = 1.0 mAdc, VCE = 10 Vdc) 50 − (IC = 10 mAdc, VCE = 10 Vdc) 70 − (IC = 10 mAdc, VCE = 10 Vdc, TA = − 55°C) 35 − (IC = 150 mAdc, VCE = 10 Vdc) 100 300 (IC = 150 mAdc, VCE = 1.0 Vdc) 50 − (IC = 500 mAdc, VCE = 10 Vdc) 40 − Collector−Emitter Saturation Voltages VCE(sat) Vdc (IC = 150 mAdc, IB = 15 mAdc) − 0.3 (IC = 500 mAdc, IB = 50 mAdc) − 1.0 Base−Emitter Saturation Voltages VBE(sat) Vdc (IC = 150 mAdc, IB = 15 mAdc) 0.6 1.2 (IC = 500 mAdc, IB = 50 mAdc) − 2.0 Input Impedance° °hie° kW (VCE = 10 Vdc, IC = 1.0 mAdc, f = 1.0 kHz) 2.0 8.0 (VCE = 10 Vdc, IC = 10 mAdc, f = 1.0 kHz) 0.25 1.25 Voltage Feedback Ratio hre − (VCE = 10 Vdc, IC = 1.0 mAdc, f = 1.0 kHz) − 8.0x10−4 (VCE = 10 Vdc, IC = 10 mAdc, f = 1.0 kHz) − 4.0x10−4 Small−Signal Current Gain ť hfeť − (VCE = 10 Vdc, IC = 1.0 mAdc, f = 1.0 kHz) 50 300 (VCE = 10 Vdc, IC = 10 mAdc, f = 1.0 kHz) 75 375 Output Admittance° °hoe° mmhos (VCE = 10 Vdc, IC = 1.0 mAdc, f = 1.0 kHz) 5.0 35 (VCE = 10 Vdc, IC = 10 mAdc, f = 1.0 kHz) 25 200 Noise Figure (VCE = 10 Vdc, IC = 100 mAdc, f = 1.0 kHz) F − 4.0 dB
DYNAMIC CHARACTERISTICS
Current−Gain − Bandwidth Product fT MHz (IC = 20 mAdc, VCE = 20 Vdc, f = 100 MHz) 300 − Output Capacitance (VCB = 10 Vdc, IE = 0, f = 1.0 MHz) Cc − 8.0 pF Input Capacitance (VEB = 0.5 Vdc, IC = 0, f = 1.0 MHz) Ce − 25 pF
SWITCHING TIMES
(TA = 25°C) Delay Time (VCC = 30 Vdc, IC = 150 mAdc, td − 10 ns IB(on) = 15 mAdc, VEB(off) = 0.5 Vdc) Rise Time Figure 1 tr − 25 Storage Time (VCC = 30 Vdc, IC = 150 mAdc, ts − 225 ns IB(on) = IB(off) = 15 mAdc) Fall Time Figure 2 tf − 60
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(TA = 25°C unless otherwise noted)
Characteristic Symbol Min Max Unit OFF CHARACTERISTICS
Collector−Emitter Breakdown Voltage (IC = 10 mAdc, IB = 0) V(BR)CEO 40 − Vdc Collector−Base Breakdown Voltage (IC = 10 mAdc, IE = 0) V(BR)CBO °75° − Vdc Emitter−Base Breakdown Voltage (IE = 10 mAdc, IC = 0) V(BR)EBO 6.0 − Vdc Base−Emitter Cutoff Current (VCE = 60 Vdc, VBE = − 3.0 Vdc) IBEX − 20 nAdc Collector−Emitter Cutoff Current (VCE = 60 Vdc, VBE = − 3.0 Vdc) ICEX − 10 nAdc Emitter−Base Cutoff Current (VEB = 3.0 Vdc, IC = 0) IEBO − 100 nAdc Collector−Base Cutoff Current ICBO (VCB = 60 Vdc, IE = 0) − 10 nAdc (VCB = 60 Vdc, IE = 0, TA = 125°C) − 10 mAdc
ON CHARACTERISTICS
DC Current Gain hFE − (IC = 0.1 mAdc, VCE = 10 Vdc) 35 − (IC = 1.0 mAdc, VCE = 10 Vdc) 50 − (IC = 10 mAdc, VCE = 10 Vdc) 70 − (IC = 10 mAdc, VCE = 10 Vdc, TA = − 55°C) 35 − (IC = 150 mAdc, VCE = 10 Vdc) 100 300 (IC = 150 mAdc, VCE = 1.0 Vdc) 50 − (IC = 500 mAdc, VCE = 10 Vdc) 40 − Collector−Emitter Saturation Voltages VCE(sat) Vdc (IC = 150 mAdc, IB = 15 mAdc) − 0.3 (IC = 500 mAdc, IB = 50 mAdc) − 1.0 Base−Emitter Saturation Voltages VBE(sat) Vdc (IC = 150 mAdc, IB = 15 mAdc) 0.6 1.2 (IC = 500 mAdc, IB = 50 mAdc) − 2.0 Input Impedance° °hie° kW (VCE = 10 Vdc, IC = 1.0 mAdc, f = 1.0 kHz) 2.0 8.0 (VCE = 10 Vdc, IC = 10 mAdc, f = 1.0 kHz) 0.25 1.25 Voltage Feedback Ratio hre − (VCE = 10 Vdc, IC = 1.0 mAdc, f = 1.0 kHz) − 8.0x10−4 (VCE = 10 Vdc, IC = 10 mAdc, f = 1.0 kHz) − 4.0x10−4 Small−Signal Current Gain ť hfeť − (VCE = 10 Vdc, IC = 1.0 mAdc, f = 1.0 kHz) 50 300 (VCE = 10 Vdc, IC = 10 mAdc, f = 1.0 kHz) 75 375 Output Admittance° °hoe° mmhos (VCE = 10 Vdc, IC = 1.0 mAdc, f = 1.0 kHz) 5.0 35 (VCE = 10 Vdc, IC = 10 mAdc, f = 1.0 kHz) 25 200 Noise Figure (VCE = 10 Vdc, IC = 100 mAdc, f = 1.0 kHz) F − 4.0 dB
DYNAMIC CHARACTERISTICS
Current−Gain − Bandwidth Product fT MHz (IC = 20 mAdc, VCE = 20 Vdc, f = 100 MHz) 300 − Output Capacitance (VCB = 10 Vdc, IE = 0, f = 1.0 MHz) Cc − 8.0 pF Input Capacitance (VEB = 0.5 Vdc, IC = 0, f = 1.0 MHz) Ce − 25 pF
SWITCHING TIMES
(TA = 25°C) Delay Time (VCC = 30 Vdc, IC = 150 mAdc, td − 10 ns IB(on) = 15 mAdc, VEB(off) = 0.5 Vdc) Rise Time Figure 1 tr − 25 Storage Time (VCC = 30 Vdc, IC = 150 mAdc, ts − 225 ns IB(on) = IB(off) = 15 mAdc) Fall Time Figure 2 tf − 60
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