Datasheet PN2907A, MMBT2907A, PZT2907A (ON Semiconductor) - 2
| 制造商 | ON Semiconductor |
| 描述 | 60 V PNP General-Purpose Transistor |
| 页数 / 页 | 11 / 2 — PN290. Absolute Maximum Ratings. 7A / MMBT2907A / PZT2. Symbol. … |
| 修订版 | 2 |
| 文件格式/大小 | PDF / 883 Kb |
| 文件语言 | 英语 |
PN290. Absolute Maximum Ratings. 7A / MMBT2907A / PZT2. Symbol. Parameter. Value. Unit. 907A — 60. Notes:. V PNP Gene
该数据表的模型线
文件文字版本
PN290 Absolute Maximum Ratings
(1),(2)
7A / MMBT2907A / PZT2
Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be opera- ble above the recommended operating conditions and stressing the parts to these levels is not recommended. In addi- tion, extended exposure to stresses above the recommended operating conditions may affect device reliability. The absolute maximum ratings are stress ratings only. Values are at TA = 25°C unless otherwise noted.
Symbol Parameter Value Unit
VCEO Collector-Emitter Voltage -60 V VCBO Collector-Base Voltage -60 V VEBO Emitter-Base Voltage -5.0 V IC Collector Current - Continuous -800 mA TJ, TSTG Operating and Storage Junction Temperature Range -55 to +150 °C
907A — 60 Notes:
1. These ratings are based on a maximum junction temperature of 150°C. 2. These are steady-state limits. ON Semiconductor should be consulted on applications involving pulsed or low- duty cycle operations.
V PNP Gene Thermal Characteristics
Values are at TA = 25°C unless otherwise noted.
Max. ra Symbol Parameter Unit l-Pu PN2907A
(4)
MMBT2907A
(3)
PZT2907A
(4) Total Device Dissipation 625 350 1000 mW P
rpose T
D Derate Above 25°C 5.0 2.8 8.0 mW/°C RθJC Thermal Resistance, Junction to Case 83.3 °C/W RθJA Thermal Resistance, Junction to Ambient 200 357 125 °C/W
ransistor Notes:
3. Device is mounted on FR-4 PCB 1.6 inch X 1.6 inch X 0.06 inch. 4. PCB size: FR-4 76 x 114 x 1.57 mm3 (3.0 inch x 4.5 inch x 0.062 inch) with minimum land pattern size. www.onsemi.com 2
(1),(2)
7A / MMBT2907A / PZT2
Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be opera- ble above the recommended operating conditions and stressing the parts to these levels is not recommended. In addi- tion, extended exposure to stresses above the recommended operating conditions may affect device reliability. The absolute maximum ratings are stress ratings only. Values are at TA = 25°C unless otherwise noted.
Symbol Parameter Value Unit
VCEO Collector-Emitter Voltage -60 V VCBO Collector-Base Voltage -60 V VEBO Emitter-Base Voltage -5.0 V IC Collector Current - Continuous -800 mA TJ, TSTG Operating and Storage Junction Temperature Range -55 to +150 °C
907A — 60 Notes:
1. These ratings are based on a maximum junction temperature of 150°C. 2. These are steady-state limits. ON Semiconductor should be consulted on applications involving pulsed or low- duty cycle operations.
V PNP Gene Thermal Characteristics
Values are at TA = 25°C unless otherwise noted.
Max. ra Symbol Parameter Unit l-Pu PN2907A
(4)
MMBT2907A
(3)
PZT2907A
(4) Total Device Dissipation 625 350 1000 mW P
rpose T
D Derate Above 25°C 5.0 2.8 8.0 mW/°C RθJC Thermal Resistance, Junction to Case 83.3 °C/W RθJA Thermal Resistance, Junction to Ambient 200 357 125 °C/W
ransistor Notes:
3. Device is mounted on FR-4 PCB 1.6 inch X 1.6 inch X 0.06 inch. 4. PCB size: FR-4 76 x 114 x 1.57 mm3 (3.0 inch x 4.5 inch x 0.062 inch) with minimum land pattern size. www.onsemi.com 2