Datasheet IRFF9120, JANTX2N6845, JANTXV2N6845 (International Rectifier) - 2
| 制造商 | International Rectifier |
| 描述 | 100V, P-CHANNEL MOSFET TO-205AF (TO-39) |
| 页数 / 页 | 7 / 2 — IRFF9120. Electrical Characteristics. @ Tj = 25°C (Unless Otherwise … |
| 文件格式/大小 | PDF / 134 Kb |
| 文件语言 | 英语 |
IRFF9120. Electrical Characteristics. @ Tj = 25°C (Unless Otherwise Specified). Parameter. Min. Typ. Max Units. Test Conditions
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IRFF9120 Electrical Characteristics @ Tj = 25°C (Unless Otherwise Specified) Parameter Min Typ Max Units Test Conditions
BVDSS Drain-to-Source Breakdown Voltage -100 — — V VGS = 0V, ID = -1.0mA ∆BVDSS/∆TJ Temperature Coefficient of Breakdown — -0.10 — V/°C Reference to 25°C, ID = -1.0mA Voltage RDS(on) Static Drain-to-Source On-State — — 0.60 VGS = -10V, ID = -2.6A ➃ Ω Resistance — — 0.69 VGS =-10V, ID =-4.0A ➃ VGS(th) Gate Threshold Voltage -2.0 — -4.0 V VDS = VGS, ID = -250µA Ω gfs Forward Transconductance 1.25 — — S ( ) VDS > -15V, IDS = -2.6A ➃ IDSS Zero Gate Voltage Drain Current — — -25 VDS= -80V, VGS=0V — — -250 µA VDS = -80V VGS = 0V, TJ = 125°C IGSS Gate-to-Source Leakage Forward — — -100 VGS = -20V IGSS Gate-to-Source Leakage Reverse — — 1 0 0 nA VGS = 20V Qg Total Gate Charge 4.3 — 16.3 VGS =-10V, ID = -4.0A Qgs Gate-to-Source Charge 1.3 — 4.7 nC VDS= -50V Qgd Gate-to-Drain (‘Miller’) Charge 1.0 — 9.0 td(on) Turn-On Delay Time — — 6 0 VDD = -50V, ID = -4.0A, t r Rise Time — — 1 0 0 RG =7.5Ω n s td(off) Turn-Off Delay Time — — 5 0 tf Fall Time — — 7 0 LS + LD Total Inductance — 7.0 — nH Measured from drain lead (6mm/0.25in. from package) to source lead (6mm/0.25in. from package) Ciss Input Capacitance — 380 VGS = 0V, VDS = -25V Coss Output Capacitance — 170 — pF f = 1.0MHz Crss Reverse Transfer Capacitance — 4 5 —
Source-Drain Diode Ratings and Characteristics Parameter Min Typ Max Units Test Conditions
IS Continuous Source Current (Body Diode) — — -4.0 A ISM Pulse Source Current (Body Diode) ➀ — — -16 VSD Diode Forward Voltage — — -4.8 V Tj = 25°C, IS =-4.0A, VGS = 0V ➃ trr Reverse Recovery Time — — 200 nS Tj = 25°C, IF = -4.0A, di/dt ≤ -100A/µs QRR Reverse Recovery Charge — — 3.1 µC VDD ≤ -50V ➃ t o n Forward Turn-On Time Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by LS + LD.
Thermal Resistance Parameter Min Typ Max Units Test Conditions
RthJC Junction-to-Case — — 6.25 °C/W RthJA Junction-to-Ambient — — 175 Typical socket mount
Note: Corresponding Spice and Saber models are available on the G&S Website.
For footnotes refer to the last page 2 www.irf.com
BVDSS Drain-to-Source Breakdown Voltage -100 — — V VGS = 0V, ID = -1.0mA ∆BVDSS/∆TJ Temperature Coefficient of Breakdown — -0.10 — V/°C Reference to 25°C, ID = -1.0mA Voltage RDS(on) Static Drain-to-Source On-State — — 0.60 VGS = -10V, ID = -2.6A ➃ Ω Resistance — — 0.69 VGS =-10V, ID =-4.0A ➃ VGS(th) Gate Threshold Voltage -2.0 — -4.0 V VDS = VGS, ID = -250µA Ω gfs Forward Transconductance 1.25 — — S ( ) VDS > -15V, IDS = -2.6A ➃ IDSS Zero Gate Voltage Drain Current — — -25 VDS= -80V, VGS=0V — — -250 µA VDS = -80V VGS = 0V, TJ = 125°C IGSS Gate-to-Source Leakage Forward — — -100 VGS = -20V IGSS Gate-to-Source Leakage Reverse — — 1 0 0 nA VGS = 20V Qg Total Gate Charge 4.3 — 16.3 VGS =-10V, ID = -4.0A Qgs Gate-to-Source Charge 1.3 — 4.7 nC VDS= -50V Qgd Gate-to-Drain (‘Miller’) Charge 1.0 — 9.0 td(on) Turn-On Delay Time — — 6 0 VDD = -50V, ID = -4.0A, t r Rise Time — — 1 0 0 RG =7.5Ω n s td(off) Turn-Off Delay Time — — 5 0 tf Fall Time — — 7 0 LS + LD Total Inductance — 7.0 — nH Measured from drain lead (6mm/0.25in. from package) to source lead (6mm/0.25in. from package) Ciss Input Capacitance — 380 VGS = 0V, VDS = -25V Coss Output Capacitance — 170 — pF f = 1.0MHz Crss Reverse Transfer Capacitance — 4 5 —
Source-Drain Diode Ratings and Characteristics Parameter Min Typ Max Units Test Conditions
IS Continuous Source Current (Body Diode) — — -4.0 A ISM Pulse Source Current (Body Diode) ➀ — — -16 VSD Diode Forward Voltage — — -4.8 V Tj = 25°C, IS =-4.0A, VGS = 0V ➃ trr Reverse Recovery Time — — 200 nS Tj = 25°C, IF = -4.0A, di/dt ≤ -100A/µs QRR Reverse Recovery Charge — — 3.1 µC VDD ≤ -50V ➃ t o n Forward Turn-On Time Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by LS + LD.
Thermal Resistance Parameter Min Typ Max Units Test Conditions
RthJC Junction-to-Case — — 6.25 °C/W RthJA Junction-to-Ambient — — 175 Typical socket mount
Note: Corresponding Spice and Saber models are available on the G&S Website.
For footnotes refer to the last page 2 www.irf.com