Datasheet HMC8121 (Analog Devices) - 9
| 制造商 | Analog Devices |
| 描述 | 81 GHz to 86 GHz, E-Band Variable Gain Amplifier |
| 页数 / 页 | 16 / 9 — Data Sheet. HMC8121. GAIN. IIP3. OIP3. 3 (d. ), IP 16. ), IP. IN 12. –10. … |
| 修订版 | B |
| 文件格式/大小 | PDF / 352 Kb |
| 文件语言 | 英语 |
Data Sheet. HMC8121. GAIN. IIP3. OIP3. 3 (d. ), IP 16. ), IP. IN 12. –10. –15. –20. –5.0. –4.5. –4.0. –3.5. –3.0. –2.5. –2.0. –1.5. –1.0. 265. 245. 225. 205. 185. 165. 145
该数据表的模型线
文件文字版本
Data Sheet HMC8121 32 25 GAIN GAIN IIP3 IIP3 28 20 OIP3 OIP3 15 24 ) ) m m B 10 B 20 3 (d 3 (d 5 ), IP 16 ), IP B B d 0 ( (d IN 12 IN A –5 G GA 8 –10 4 –15 0 –20
4
–5.0 –4.5 –4.0 –3.5 –3.0 –2.5 –2.0 –1.5 –1.0
22 0
265 245 225 205 185 165 145 125 105 85
02
CONTROL VOLTAGE (V)
154- 3154-
DRAIN CURRENT (mA)
1 13 Figure 23. Gain and Input/Output IP3 vs. Control Voltage, Figure 26. Gain and Input/Output IP3 vs. Drain Current, PIN = −10 dBm/Tone, RF = 81 GHz PIN = −5 dBm/Tone, VCTL1/VCTL2 = −1 V, RF = 81 GHz, Drain Current = (IDD1/IDD2 Fixed at 50 mA) + (IDD3 to IDD6 Swept)
32 25 GAIN GAIN IIP3 IIP3 28 OIP3 20 OIP3 15 24 ) ) m m B 10 B d 20 3 ( 3 (d IP 5 ), 16 ), IP B B d d 0 ( ( IN 12 IN A A G –5 G 8 –10 4 –15 0 –20 –5.0 –4.5 –4.0 –3.5 –3.0 –2.5 –2.0 –1.5 –1.0
23 27 0
265 245 225 205 185 165 145 125 105 85
0
CONTROL VOLTAGE (V)
3154-
DRAIN CURRENT (mA)
3154- 1 1 Figure 24. Gain and Input/Output IP3 vs. Control Voltage, Figure 27. Gain and Input/Output IP3 vs. Drain Current, PIN = −10 dBm/Tone, RF = 83.5 GHz PIN = −5 dBm/Tone, VCTL1/VCTL2 = −1 V, RF = 83.5 GHz, Drain Current = (IDD1/IDD2 Fixed at 50 mA) + (IDD3 to IDD6 Swept)
32 25 GAIN GAIN IIP3 IIP3 28 20 OIP3 OIP3 15 24 ) ) m m 10 B B d 20 d ( 3 ( 5 IP ), 16 ), IP3 B B d 0 ( (d IN 12 IN A –5 GA G 8 –10 4 –15 0 –20 –5.0 –4.5 –4.0 –3.5 –3.0 –2.5 –2.0 –1.5 –1.0
26 0
265 245 225 205 185 165 145 125 105 85
025
CONTROL VOLTAGE (V)
154- 3154-
DRAIN CURRENT (mA)
1 13 Figure 25. Gain and Input/Output IP3 vs. Control Voltage, Figure 28. Gain and Input/Output IP3 vs. Drain Current, PIN = −10 dBm/Tone, RF = 86 GHz PIN = −5 dBm/Tone, VCTL1/VCTL2 = −1 V, RF = 86 GHz, Drain Current = (IDD1/IDD2 Fixed at 50 mA) + (IDD3 to IDD6 Swept) Rev. B | Page 9 of 16 Document Outline FEATURES APPLICATIONS GENERAL DESCRIPTION FUNCTIONAL BLOCK DIAGRAM REVISION HISTORY SPECIFICATIONS ABSOLUTE MAXIMUM RATINGS THERMAL RESISTANCE ESD CAUTION PIN CONFIGURATION AND FUNCTION DESCRIPTIONS INTERFACE SCHEMATICS TYPICAL PERFORMANCE CHARACTERISTICS THEORY OF OPERATION TYPICAL APPLICATION CIRCUIT ASSEMBLY DIAGRAM MOUNTING AND BONDING TECHNIQUES FOR MILLIMETERWAVE GaAs MMICS HANDLING PRECAUTIONS Storage Cleanliness Static Sensitivity Transients General Handling MOUNTING Eutectic Die Attach Epoxy Die Attach WIRE BONDING OUTLINE DIMENSIONS ORDERING GUIDE
4
–5.0 –4.5 –4.0 –3.5 –3.0 –2.5 –2.0 –1.5 –1.0
22 0
265 245 225 205 185 165 145 125 105 85
02
CONTROL VOLTAGE (V)
154- 3154-
DRAIN CURRENT (mA)
1 13 Figure 23. Gain and Input/Output IP3 vs. Control Voltage, Figure 26. Gain and Input/Output IP3 vs. Drain Current, PIN = −10 dBm/Tone, RF = 81 GHz PIN = −5 dBm/Tone, VCTL1/VCTL2 = −1 V, RF = 81 GHz, Drain Current = (IDD1/IDD2 Fixed at 50 mA) + (IDD3 to IDD6 Swept)
32 25 GAIN GAIN IIP3 IIP3 28 OIP3 20 OIP3 15 24 ) ) m m B 10 B d 20 3 ( 3 (d IP 5 ), 16 ), IP B B d d 0 ( ( IN 12 IN A A G –5 G 8 –10 4 –15 0 –20 –5.0 –4.5 –4.0 –3.5 –3.0 –2.5 –2.0 –1.5 –1.0
23 27 0
265 245 225 205 185 165 145 125 105 85
0
CONTROL VOLTAGE (V)
3154-
DRAIN CURRENT (mA)
3154- 1 1 Figure 24. Gain and Input/Output IP3 vs. Control Voltage, Figure 27. Gain and Input/Output IP3 vs. Drain Current, PIN = −10 dBm/Tone, RF = 83.5 GHz PIN = −5 dBm/Tone, VCTL1/VCTL2 = −1 V, RF = 83.5 GHz, Drain Current = (IDD1/IDD2 Fixed at 50 mA) + (IDD3 to IDD6 Swept)
32 25 GAIN GAIN IIP3 IIP3 28 20 OIP3 OIP3 15 24 ) ) m m 10 B B d 20 d ( 3 ( 5 IP ), 16 ), IP3 B B d 0 ( (d IN 12 IN A –5 GA G 8 –10 4 –15 0 –20 –5.0 –4.5 –4.0 –3.5 –3.0 –2.5 –2.0 –1.5 –1.0
26 0
265 245 225 205 185 165 145 125 105 85
025
CONTROL VOLTAGE (V)
154- 3154-
DRAIN CURRENT (mA)
1 13 Figure 25. Gain and Input/Output IP3 vs. Control Voltage, Figure 28. Gain and Input/Output IP3 vs. Drain Current, PIN = −10 dBm/Tone, RF = 86 GHz PIN = −5 dBm/Tone, VCTL1/VCTL2 = −1 V, RF = 86 GHz, Drain Current = (IDD1/IDD2 Fixed at 50 mA) + (IDD3 to IDD6 Swept) Rev. B | Page 9 of 16 Document Outline FEATURES APPLICATIONS GENERAL DESCRIPTION FUNCTIONAL BLOCK DIAGRAM REVISION HISTORY SPECIFICATIONS ABSOLUTE MAXIMUM RATINGS THERMAL RESISTANCE ESD CAUTION PIN CONFIGURATION AND FUNCTION DESCRIPTIONS INTERFACE SCHEMATICS TYPICAL PERFORMANCE CHARACTERISTICS THEORY OF OPERATION TYPICAL APPLICATION CIRCUIT ASSEMBLY DIAGRAM MOUNTING AND BONDING TECHNIQUES FOR MILLIMETERWAVE GaAs MMICS HANDLING PRECAUTIONS Storage Cleanliness Static Sensitivity Transients General Handling MOUNTING Eutectic Die Attach Epoxy Die Attach WIRE BONDING OUTLINE DIMENSIONS ORDERING GUIDE