NXP Semiconductors Product data sheet NPN general purpose double transistor BC846S MGL738 MGL739 103 1200 handbook, halfpage handbook, halfpage VBE V (mV) CEsat (mV) 1000 (1) 800 (2) 102 (1) (2) 600 (3) (3) 400 10 200 10−1 1 10 102 103 10−1 1 10 102 103 IC (mA) IC (mA) IC/IB = 20. VCE = 5 V. (1) Tamb = 150 °C. (1) Tamb = −55 °C. (2) Tamb = 25 °C. (2) Tamb = 25 °C. (3) Tamb = −55 °C. (3) Tamb = 150 °C. Fig.2 Collector-emitter saturation voltage as a Fig.3 Base-emitter voltage as a function of function of collector current; typical values. collector current; typical values. MGL740 400 handbook, full pagewidth hFE (1) 300 200 (2) (3) 100 0 10−1 1 10 102 103 IC (mA) VCE = 5 V. (2) Tamb = 25 °C. (1) Tamb = 150 °C. (3) Tamb = −55 °C. Fig.4 DC current gain as a function of collector current; typical values. 1999 Sep 01 4 Document Outline Features Applications Description Pinning Marking Limiting values Thermal characteristics Characteristics Package outline Data sheet status Disclaimers