Datasheet BC846BDW1, BC847BDW1, BC848CDW1 (ON Semiconductor) - 2
| 制造商 | ON Semiconductor |
| 描述 | Dual NPN Bipolar Transistor |
| 页数 / 页 | 11 / 2 — BC846BDW1, BC847BDW1, BC848CDW1. ELECTRICAL CHARACTERISTICS. … |
| 修订版 | 11 |
| 文件格式/大小 | PDF / 107 Kb |
| 文件语言 | 英语 |
BC846BDW1, BC847BDW1, BC848CDW1. ELECTRICAL CHARACTERISTICS. Characteristic. Symbol. Min. Typ. Max. Unit. OFF CHARACTERISTICS
该数据表的模型线
文件文字版本
BC846BDW1, BC847BDW1, BC848CDW1 ELECTRICAL CHARACTERISTICS
(TA = 25°C unless otherwise noted)
Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS
Collector − Emitter Breakdown Voltage V(BR)CEO V (IC = 10 mA) BC846 65 − − BC847 45 − − BC848 30 − − Collector − Emitter Breakdown Voltage V(BR)CES V (IC = 10 mA, VEB = 0) BC846 80 − − BC847 50 − − BC848 30 − − Collector − Base Breakdown Voltage V(BR)CBO V (IC = 10 mA) BC846 80 − − BC847 50 − − BC848 30 − − Emitter − Base Breakdown Voltage V(BR)EBO V (IE = 1.0 mA) BC846 6.0 − − BC847 6.0 − − BC848 5.0 − − Collector Cutoff Current ICBO (VCB = 30 V) − − 15 nA (VCB = 30 V, TA = 150°C) − − 5.0 mA
ON CHARACTERISTICS
DC Current Gain hFE − (IC = 10 mA, VCE = 5.0 V) BC846B, BC847B − 150 − BC847C, BC848C − 270 − (IC = 2.0 mA, VCE = 5.0 V) BC846B, BC847B 200 290 450 BC847C, BC848C 420 520 800 Collector − Emitter Saturation Voltage VCE(sat) V (IC = 10 mA, IB = 0.5 mA) − − 0.25 (IC = 100 mA, IB = 5.0 mA) − − 0.6 Base − Emitter Saturation Voltage VBE(sat) V (IC = 10 mA, IB = 0.5 mA) − 0.7 − (IC = 100 mA, IB = 5.0 mA) − 0.9 − Base − Emitter Voltage VBE(on) mV (IC = 2.0 mA, VCE = 5.0 V) 580 660 700 (IC = 10 mA, VCE = 5.0 V) − − 770
SMALL− SIGNAL CHARACTERISTICS
Current − Gain − Bandwidth Product fT MHz (IC = 10 mA, VCE = 5.0 Vdc, f = 100 MHz) 100 − − Output Capacitance Cobo pF (VCB = 10 V, f = 1.0 MHz) − − 4.5 Noise Figure NF dB (IC = 0.2 mA, VCE = 5.0 Vdc, RS = 2.0 kW,f = 1.0 kHz, BW = 200 Hz) − − 10 Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions.
www.onsemi.com 2
(TA = 25°C unless otherwise noted)
Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS
Collector − Emitter Breakdown Voltage V(BR)CEO V (IC = 10 mA) BC846 65 − − BC847 45 − − BC848 30 − − Collector − Emitter Breakdown Voltage V(BR)CES V (IC = 10 mA, VEB = 0) BC846 80 − − BC847 50 − − BC848 30 − − Collector − Base Breakdown Voltage V(BR)CBO V (IC = 10 mA) BC846 80 − − BC847 50 − − BC848 30 − − Emitter − Base Breakdown Voltage V(BR)EBO V (IE = 1.0 mA) BC846 6.0 − − BC847 6.0 − − BC848 5.0 − − Collector Cutoff Current ICBO (VCB = 30 V) − − 15 nA (VCB = 30 V, TA = 150°C) − − 5.0 mA
ON CHARACTERISTICS
DC Current Gain hFE − (IC = 10 mA, VCE = 5.0 V) BC846B, BC847B − 150 − BC847C, BC848C − 270 − (IC = 2.0 mA, VCE = 5.0 V) BC846B, BC847B 200 290 450 BC847C, BC848C 420 520 800 Collector − Emitter Saturation Voltage VCE(sat) V (IC = 10 mA, IB = 0.5 mA) − − 0.25 (IC = 100 mA, IB = 5.0 mA) − − 0.6 Base − Emitter Saturation Voltage VBE(sat) V (IC = 10 mA, IB = 0.5 mA) − 0.7 − (IC = 100 mA, IB = 5.0 mA) − 0.9 − Base − Emitter Voltage VBE(on) mV (IC = 2.0 mA, VCE = 5.0 V) 580 660 700 (IC = 10 mA, VCE = 5.0 V) − − 770
SMALL− SIGNAL CHARACTERISTICS
Current − Gain − Bandwidth Product fT MHz (IC = 10 mA, VCE = 5.0 Vdc, f = 100 MHz) 100 − − Output Capacitance Cobo pF (VCB = 10 V, f = 1.0 MHz) − − 4.5 Noise Figure NF dB (IC = 0.2 mA, VCE = 5.0 Vdc, RS = 2.0 kW,f = 1.0 kHz, BW = 200 Hz) − − 10 Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions.
www.onsemi.com 2