Datasheet BC846, BC847, BC848, BC849, BC850 (Fairchild)
| 制造商 | Fairchild |
| 描述 | NPN Epitaxial Silicon Transistor |
| 页数 / 页 | 5 / 1 — BC8. 46- BC850. BC846- BC850. NPN Epitaxial Silicon Transistor. NPN. … |
| 文件格式/大小 | PDF / 151 Kb |
| 文件语言 | 英语 |
BC8. 46- BC850. BC846- BC850. NPN Epitaxial Silicon Transistor. NPN. Features. Epit. axial Silicon T. Absolute Maximum Ratings*. ansistor
该数据表的模型线
文件文字版本
BC8 46- BC850
August 2006
BC846- BC850
tm
NPN Epitaxial Silicon Transistor NPN Features Epit
• Switching and Amplifier Applications • Suitable for automatic insertion in thick and thin-film circuits
axial Silicon T
3 • Low Noise: BC849, BC850 • Complement to BC856 ... BC860 2 SOT-23 1 1. Base 2. Emitter 3. Collector
r Absolute Maximum Ratings*
Ta = 25°C unless otherwise noted
ansistor Symbol Parameter Value Units
VCBO Collector-Base Voltage : BC846 80 V : BC847/850 50 V : BC848/849 30 V VCEO Collector-Emitter Voltage : BC846 65 V : BC847/850 45 V : BC848/849 30 V VEBO Emitter-Base Voltage : BC846/847 6 V : BC848/849/850 5 V IC Collector Current (DC) 100 mA PC Collector Power Dissipation 310 mW TJ Junction Temperature 150 °C TSTG Storage Temperature -65 ~ 150 °C * These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
Electrical Characteristics*
Ta=25°C unless otherwise noted
Symbol Parameter Test Condition Min. Typ. Max. Units
ICBO Collector Cut-off Current VCB=30V, IE=0 15 nA hFE DC Current Gain VCE=5V, IC=2mA 110 800 VCE (sat) Collector-Emitter Saturation Voltage IC=10mA, IB=0.5mA 90 250 mV IC=100mA, IB=5mA 200 600 mV VBE (sat) Collector-Base Saturation Voltage IC=10mA, IB=0.5mA 700 mV IC=100mA, IB=5mA 900 mV VBE (on) Base-Emitter On Voltage VCE=5V, IC=2mA 580 660 700 mV VCE=5V, IC=10mA 720 mV fT Current Gain Bandwidth Product VCE=5V, IC=10mA, 300 MHz f=100MHz Cob Output Capacitance VCB=10V, IE=0, f=1MHz 3.5 6 pF Cib Input Capacitance VEB=0.5V, IC=0, f=1MHz 9 pF NF Noise Figure : BC846/847/848 VCE= 5V, IC= 200µA 2 10 dB : BC849/850 RG=2KΩ, f=1KHz 1.2 4 dB : BC849 VCE= 5V, IC= 200µA 1.4 4 dB : BC850 RG=2KΩ, f=30~15000Hz 1.4 3 dB * Pulse Test: Pulse Width≤300µs, Duty Cycle≤2% ©2006 Fairchild Semiconductor Corporation
1
www.fairchildsemi.com BC846- BC850 Rev. B
August 2006
BC846- BC850
tm
NPN Epitaxial Silicon Transistor NPN Features Epit
• Switching and Amplifier Applications • Suitable for automatic insertion in thick and thin-film circuits
axial Silicon T
3 • Low Noise: BC849, BC850 • Complement to BC856 ... BC860 2 SOT-23 1 1. Base 2. Emitter 3. Collector
r Absolute Maximum Ratings*
Ta = 25°C unless otherwise noted
ansistor Symbol Parameter Value Units
VCBO Collector-Base Voltage : BC846 80 V : BC847/850 50 V : BC848/849 30 V VCEO Collector-Emitter Voltage : BC846 65 V : BC847/850 45 V : BC848/849 30 V VEBO Emitter-Base Voltage : BC846/847 6 V : BC848/849/850 5 V IC Collector Current (DC) 100 mA PC Collector Power Dissipation 310 mW TJ Junction Temperature 150 °C TSTG Storage Temperature -65 ~ 150 °C * These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
Electrical Characteristics*
Ta=25°C unless otherwise noted
Symbol Parameter Test Condition Min. Typ. Max. Units
ICBO Collector Cut-off Current VCB=30V, IE=0 15 nA hFE DC Current Gain VCE=5V, IC=2mA 110 800 VCE (sat) Collector-Emitter Saturation Voltage IC=10mA, IB=0.5mA 90 250 mV IC=100mA, IB=5mA 200 600 mV VBE (sat) Collector-Base Saturation Voltage IC=10mA, IB=0.5mA 700 mV IC=100mA, IB=5mA 900 mV VBE (on) Base-Emitter On Voltage VCE=5V, IC=2mA 580 660 700 mV VCE=5V, IC=10mA 720 mV fT Current Gain Bandwidth Product VCE=5V, IC=10mA, 300 MHz f=100MHz Cob Output Capacitance VCB=10V, IE=0, f=1MHz 3.5 6 pF Cib Input Capacitance VEB=0.5V, IC=0, f=1MHz 9 pF NF Noise Figure : BC846/847/848 VCE= 5V, IC= 200µA 2 10 dB : BC849/850 RG=2KΩ, f=1KHz 1.2 4 dB : BC849 VCE= 5V, IC= 200µA 1.4 4 dB : BC850 RG=2KΩ, f=30~15000Hz 1.4 3 dB * Pulse Test: Pulse Width≤300µs, Duty Cycle≤2% ©2006 Fairchild Semiconductor Corporation
1
www.fairchildsemi.com BC846- BC850 Rev. B