Datasheet BC846AW, BC846BW, BC847AW, BC847BW, BC847CW, BC848AW, BC848BW, BC848CW (Diodes) - 3
| 制造商 | Diodes |
| 描述 | NPN |
| 页数 / 页 | 6 / 3 — BC846AW-BC848CW. Electrical Characteristics. Characteristic. Symbol. Min. … |
| 修订版 | 14-2 |
| 文件格式/大小 | PDF / 342 Kb |
| 文件语言 | 英语 |
BC846AW-BC848CW. Electrical Characteristics. Characteristic. Symbol. Min. Typ. Max. Unit. Test Condition. www.diodes.com
该数据表的模型线
文件文字版本
BC846AW-BC848CW Electrical Characteristics
(@TA = +25°C, unless otherwise specified.)
Characteristic Symbol Min Typ Max Unit Test Condition
BC846 80 Collector-Base Breakdown Voltage BC847 BVCBO 50 — — V IC = 100µA BC848 30 BC846 65 Collector-Emitter Breakdown Voltage (Note 8) BC847 BVCEO 45 — — V IC = 10mA BC848 30 BC846, BC847 6 Emitter-Base Breakdown Voltage BVEBO — — V IE = 100µA BC848 5 A 110 180 220 DC Current Gain (Note 8) Current Gain Group B hFE 200 290 450 — VCE = 5.0V, IC = 2.0mA C 420 520 800 20 nA VCB = 30V Collector Cutoff Current ICBO — — 5 µA VCB = 30V, TA = +150°C 90 250 IC = 10mA, IB = 0.5mA Collector-Emitter Saturation Voltage (Note 8) VCE(sat) — mV 200 600 IC = 100mA, IB = 5.0mA 580 660 700 IC = 2mA, VCE = 5V Base-Emitter Turn-On Voltage (Note 8) VBE(on) mV — — 770 IC = 10mA, VCE = 5V 700 IC = 10mA, IB = 0.5mA Base-Emitter Saturation Voltage (Note 8) VBE(sat) — — mV 900 IC = 100mA, IB = 5mA Output Capacitance Cobo — 3 4.5 pF VCB = 10V, f = 1.0MHz V Transition Frequency f CE = 5V, IC = 10mA, T 100 300 — MHz f = 100MHz VCE = 5V, IC = 200µA Noise Figure NF — — 10 dB RS = 2kΩ, f = 1kHz ∆f = 200Hz Note: 8. Measured under pulsed conditions. Pulse width ≤ 300µs. Duty cycle ≤ 2%. BC846AW – BC848CW 3 of 6 April 2017 Document Number: DS30250 Rev. 14 - 2
www.diodes.com
© Diodes Incorporated
(@TA = +25°C, unless otherwise specified.)
Characteristic Symbol Min Typ Max Unit Test Condition
BC846 80 Collector-Base Breakdown Voltage BC847 BVCBO 50 — — V IC = 100µA BC848 30 BC846 65 Collector-Emitter Breakdown Voltage (Note 8) BC847 BVCEO 45 — — V IC = 10mA BC848 30 BC846, BC847 6 Emitter-Base Breakdown Voltage BVEBO — — V IE = 100µA BC848 5 A 110 180 220 DC Current Gain (Note 8) Current Gain Group B hFE 200 290 450 — VCE = 5.0V, IC = 2.0mA C 420 520 800 20 nA VCB = 30V Collector Cutoff Current ICBO — — 5 µA VCB = 30V, TA = +150°C 90 250 IC = 10mA, IB = 0.5mA Collector-Emitter Saturation Voltage (Note 8) VCE(sat) — mV 200 600 IC = 100mA, IB = 5.0mA 580 660 700 IC = 2mA, VCE = 5V Base-Emitter Turn-On Voltage (Note 8) VBE(on) mV — — 770 IC = 10mA, VCE = 5V 700 IC = 10mA, IB = 0.5mA Base-Emitter Saturation Voltage (Note 8) VBE(sat) — — mV 900 IC = 100mA, IB = 5mA Output Capacitance Cobo — 3 4.5 pF VCB = 10V, f = 1.0MHz V Transition Frequency f CE = 5V, IC = 10mA, T 100 300 — MHz f = 100MHz VCE = 5V, IC = 200µA Noise Figure NF — — 10 dB RS = 2kΩ, f = 1kHz ∆f = 200Hz Note: 8. Measured under pulsed conditions. Pulse width ≤ 300µs. Duty cycle ≤ 2%. BC846AW – BC848CW 3 of 6 April 2017 Document Number: DS30250 Rev. 14 - 2
www.diodes.com
© Diodes Incorporated