Datasheet BC847AT, BC847BT, BC847CT (Diodes) - 3
制造商 | Diodes |
描述 | NPN |
页数 / 页 | 6 / 3 — BC847AT, BT, CT. Electrical Characteristics. Characteristic. Symbol. Min. … |
文件格式/大小 | PDF / 318 Kb |
文件语言 | 英语 |
BC847AT, BT, CT. Electrical Characteristics. Characteristic. Symbol. Min. Typ. Max. Unit. Test Condition. OFF CHARACTERISTICS (Note 7)

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BC847AT, BT, CT Electrical Characteristics
(@TA = +25°C, unless otherwise specified.)
Characteristic Symbol Min Typ Max Unit Test Condition OFF CHARACTERISTICS (Note 7)
Collector-Base Breakdown Voltage BVCBO 50 V IC = 10µA, IE = 0 Collector-Emitter Breakdown Voltage BVCEO 45 V IC = 1mA, IB = 0 Emitter-Base Breakdown Voltage BVEBO 6.0 V IE = 10µA, IC = 0
ON CHARACTERISTICS (Note 7)
Current Gain A 110 220 DC Current Gain B hFE 200 290 450 VCE = 5.0V, IC = 2.0mA C 420 520 800 250 I Collector-Emitter Saturation Voltage V C = 10mA, IB = 0.5mA CE(SAT) mV 600 IC = 100mA, IB = 5mA 700 I Base-Emitter Saturation Voltage V C = 10mA, IB = 0.5mA BE(SAT) 900 mV IC = 100mA, IB = 5mA 580 660 700 V Base-Emitter Voltage CE = 5.0V, IC = 2.0mA VBE — mV — 770 VCE = 5.0V, IC = 10mA 15 nA V Collector-Emitter Cutoff Current I CB = 30V CBO — — 5.0 µA VCB = 30V, TA = +150°C
SMALL SIGNAL CHARACTERISTICS
Output Capacitance COBO 4.5 pF VCB = 10V, f = 1.0MHz V Current Gain-Bandwidth Product f CE = 5V, IC = 10 A, T 100 MHz f = 100MHz BC847BT 1.0 V Noise Figure NF dB CE = 5V, RS = 2kΩ, BC847CT 4.0 f = 1MHz, BW = 200Hz Note: 7. Measured under pulsed conditions. Pulse width ≤ 300µs. Duty cycle ≤ 2%. BC847AT, BT, CT 3 of 6 September 2016 Document number: DS30274 Rev. 10 - 2
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