Datasheet BC856W, BC857W, BC858W, BC859W, BC860W (Infineon) - 5

制造商Infineon
描述PNP Silicon AF Transistors SOT-323
页数 / 页11 / 5 — BC856W...BC860W. Electrical Characteristics. Parameter. Symbol. Values. …
文件格式/大小PDF / 187 Kb
文件语言英语

BC856W...BC860W. Electrical Characteristics. Parameter. Symbol. Values. Unit. min. typ. max. AC characteristics

BC856W...BC860W Electrical Characteristics Parameter Symbol Values Unit min typ max AC characteristics

该数据表的模型线

文件文字版本

BC856W...BC860W Electrical Characteristics
at TA = 25 °C, unless otherwise specified.
Parameter Symbol Values Unit min. typ. max. AC characteristics
Transition frequency fT - 250 - MHz IC = 20 mA, VCE = 5 V, f = 100 MHz Collector-base capacitance Ccb - 3 5 pF VCB = 10 V, f = 1 MHz Emitter-base capacitance Ceb - 10 15 VEB = 0.5 V, f = 1 MHz Short-circuit input impedance h11e kΩ IC = 2 mA, VCE = 5 V, f = 1 kHz hFE-gr.
A
- 2.7 - hFE-gr.
B
- 4.5 - hFE-gr.
C
- 8.7 - Open-circuit reverse voltage transf.ratio h12e 10-4 IC = 2 mA, VCE = 5 V, f = 1 kHz hFE-gr.
A
- 1.5 - hFE-gr.
B
- 2 - hFE-gr.
C
- 3 - Short-circuit forward current transf.ratio h21e - IC = 2 mA, VCE = 5 V, f = 1 kHz hFE-gr.
A
- 200 - hFE-gr.
B
- 330 - hFE-gr.
C
- 600 - Open-circuit output admittance h22e µS IC = 2 mA, VCE = 5 V, f = 1 kHz hFE-gr.
A
- 18 - hFE-gr.
B
- 30 - hFE-gr.
C
- 60 - Noise figure F - - 10 dB IC = 200 µA, VCE = 5 V, RS = 2 kΩ, BC856W f = 1 kHz, ∆ f = 200 Hz BC857W BC858W Noise figure F IC = 200 µA, VCE = 5 V, RS = 2 kΩ, f = 1 kHz, ∆ f = 200 Hz BC859W - 1 4 BC860W - 1 4 Equivalent noise voltage Vn - - 0.11 µV IC = 200 µA, VCE = 5 V, RS = 2 kΩ, BC860W f = 10 ... 50 Hz 4 Jan-28-2005