Datasheet BC847ATT1, BC847BTT1, BC847CTT1 (ON Semiconductor)
| 制造商 | ON Semiconductor |
| 描述 | NPN Bipolar Transistor |
| 页数 / 页 | 6 / 1 — NPN Silicon. http://onsemi.com. Features. MAXIMUM RATINGS. Rating. … |
| 修订版 | 3 |
| 文件格式/大小 | PDF / 68 Kb |
| 文件语言 | 英语 |
NPN Silicon. http://onsemi.com. Features. MAXIMUM RATINGS. Rating. Symbol. Max. Unit. CASE 463. SC−75/SOT−416. STYLE 1. MARKING DIAGRAM
该数据表的模型线
文件文字版本
link to page 1 link to page 1 link to page 1 link to page 1 link to page 5 BC847ATT1, BC847BTT1, BC847CTT1 General Purpose Transistors
NPN Silicon http://onsemi.com
These transistors are designed for general purpose amplifier applications. They are housed in the SC−75/SOT−416 package which COLLECTOR is designed for low power surface mount applications. 3
Features
1 • NSV Prefix for Automotive and Other Applications Requiring BASE Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable 2 • Pb−Free Packages are Available EMITTER
MAXIMUM RATINGS
(TA = 25°C)
Rating Symbol Max Unit
3
CASE 463
Collector−Emitter Voltage V
SC−75/SOT−416
CEO 45 V 2
STYLE 1
Collector−Base Voltage VCBO 50 V 1 Emitter−Base Voltage VEBO 6.0 V Collector Current − Continuous IC 100 mAdc Stresses exceeding those listed in the Maximum Ratings table may damage the
MARKING DIAGRAM
device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected.
THERMAL CHARACTERISTICS
XXMG G
Characteristic Symbol Max Unit
Total Device Dissipation, PD FR−4 Board (Note 1) 200 mW XX = Device Code TA = 25°C M = Date Code Derated above 25°C 1.6 mW/°C G = Pb−Free Package (Note: Microdot may be in either location) Thermal Resistance, RqJA 600 °C/W Junction−to−Ambient (Note 1) Total Device Dissipation, PD
ORDERING INFORMATION
FR−4 Board (Note 2) 300 mW See detailed ordering, marking and shipping information in the TA = 25°C package dimensions section on page 5 of this data sheet. Derated above 25°C 2.4 mW/°C Thermal Resistance, RqJA 400 °C/W Junction−to−Ambient (Note 2) Junction and Storage TJ, Tstg −55 to °C Temperature Range +150 1. FR−4 @ min pad. 2. FR−4 @ 1.0 × 1.0 in pad. © Semiconductor Components Industries, LLC, 2014
1
Publication Order Number:
November, 2014 − Rev. 3 BC847ATT1/D
NPN Silicon http://onsemi.com
These transistors are designed for general purpose amplifier applications. They are housed in the SC−75/SOT−416 package which COLLECTOR is designed for low power surface mount applications. 3
Features
1 • NSV Prefix for Automotive and Other Applications Requiring BASE Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable 2 • Pb−Free Packages are Available EMITTER
MAXIMUM RATINGS
(TA = 25°C)
Rating Symbol Max Unit
3
CASE 463
Collector−Emitter Voltage V
SC−75/SOT−416
CEO 45 V 2
STYLE 1
Collector−Base Voltage VCBO 50 V 1 Emitter−Base Voltage VEBO 6.0 V Collector Current − Continuous IC 100 mAdc Stresses exceeding those listed in the Maximum Ratings table may damage the
MARKING DIAGRAM
device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected.
THERMAL CHARACTERISTICS
XXMG G
Characteristic Symbol Max Unit
Total Device Dissipation, PD FR−4 Board (Note 1) 200 mW XX = Device Code TA = 25°C M = Date Code Derated above 25°C 1.6 mW/°C G = Pb−Free Package (Note: Microdot may be in either location) Thermal Resistance, RqJA 600 °C/W Junction−to−Ambient (Note 1) Total Device Dissipation, PD
ORDERING INFORMATION
FR−4 Board (Note 2) 300 mW See detailed ordering, marking and shipping information in the TA = 25°C package dimensions section on page 5 of this data sheet. Derated above 25°C 2.4 mW/°C Thermal Resistance, RqJA 400 °C/W Junction−to−Ambient (Note 2) Junction and Storage TJ, Tstg −55 to °C Temperature Range +150 1. FR−4 @ min pad. 2. FR−4 @ 1.0 × 1.0 in pad. © Semiconductor Components Industries, LLC, 2014
1
Publication Order Number:
November, 2014 − Rev. 3 BC847ATT1/D