Datasheet BC856ALT1G (ON Semiconductor) - 2
| 制造商 | ON Semiconductor |
| 描述 | PNP Bipolar Transistor |
| 页数 / 页 | 7 / 2 — BC856ALT1G Series. ELECTRICAL CHARACTERISTICS. Characteristic. Symbol. … |
| 修订版 | 15 |
| 文件格式/大小 | PDF / 152 Kb |
| 文件语言 | 英语 |
BC856ALT1G Series. ELECTRICAL CHARACTERISTICS. Characteristic. Symbol. Min. Typ. Max. Unit. OFF CHARACTERISTICS. ON CHARACTERISTICS
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BC856ALT1G Series ELECTRICAL CHARACTERISTICS
(TA = 25°C unless otherwise noted)
Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS
Collector − Emitter Breakdown Voltage BC856, SBC856 Series V(BR)CEO −65 − − V (IC = −10 mA) BC857, SBC857 Series −45 − − BC858, NSBVC858 BC859 Series −30 − − Collector − Emitter Breakdown Voltage BC856 S, SBC856eries V(BR)CES −80 − − V (IC = −10 mA, VEB = 0) BC857A, SBC857A, BC857B, SBC857B Only −50 − − BC858, NSVB858, BC859 Series −30 − − Collector − Base Breakdown Voltage BC856, SBC856 Series V(BR)CBO −80 − − V (IC = −10 mA) BC857, SBC857 Series −50 − − BC858, NSVBC858, BC859 Series −30 − − Emitter − Base Breakdown Voltage BC856, SBC856 Series V(BR)EBO −5.0 − − V (IE = −1.0 mA) BC857, SBC857 Series −5.0 − − BC858, NSVBC858, BC859 Series −5.0 − − Collector Cutoff Current (VCB = −30 V) ICBO − − −15 nA Collector Cutoff Current (VCB = −30 V, TA = 150°C) − − −4.0 mA
ON CHARACTERISTICS
DC Current Gain BC856A, SBC856A, BC857A, SBC857A, BC858A hFE − 90 − − (IC = −10 mA, VCE = −5.0 V) BC856B, SBC856B, BC857B, SBC857B, − 150 − BC858B, NSVBC858B BC857C, SBC857C BC858C − 270 − (IC = −2.0 mA, VCE = −5.0 V) BC856A, SBC856A, BC857A, 125 180 250 SBC857A, BC858A BC856B, SBC856B, BC857B, SBC857B, BC858B, 220 290 475 NSVBC858B, BC859B BC857C, SBC857C, BC858C, BC859C 420 520 800 Collector − Emitter Saturation Voltage VCE(sat) V (IC = −10 mA, IB = −0.5 mA) − − −0.3 (IC = −100 mA, IB = −5.0 mA) − − −0.65 Base − Emitter Saturation Voltage VBE(sat) V (IC = −10 mA, IB = −0.5 mA) − −0.7 − (IC = −100 mA, IB = −5.0 mA) − −0.9 − Base − Emitter On Voltage VBE(on) V (IC = −2.0 mA, VCE = −5.0 V) −0.6 − −0.75 (IC = −10 mA, VCE = −5.0 V) − − −0.82
SMALL− SIGNAL CHARACTERISTICS
Current − Gain − Bandwidth Product fT 100 − − MHz (IC = −10 mA, VCE = −5.0 Vdc, f = 100 MHz) Output Capacitance Cob − − 4.5 pF (VCB = −10 V, f = 1.0 MHz) Noise Figure NF dB (IC = −0.2 mA, VCE = −5.0 Vdc, RS = 2.0 kW, f = 1.0 kHz, BW = 200 Hz) BC856, SBC856, BC857, SBC857, BC858, NSVBC858 Series − − 10 BC859 Series − − 4.0 Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions.
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(TA = 25°C unless otherwise noted)
Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS
Collector − Emitter Breakdown Voltage BC856, SBC856 Series V(BR)CEO −65 − − V (IC = −10 mA) BC857, SBC857 Series −45 − − BC858, NSBVC858 BC859 Series −30 − − Collector − Emitter Breakdown Voltage BC856 S, SBC856eries V(BR)CES −80 − − V (IC = −10 mA, VEB = 0) BC857A, SBC857A, BC857B, SBC857B Only −50 − − BC858, NSVB858, BC859 Series −30 − − Collector − Base Breakdown Voltage BC856, SBC856 Series V(BR)CBO −80 − − V (IC = −10 mA) BC857, SBC857 Series −50 − − BC858, NSVBC858, BC859 Series −30 − − Emitter − Base Breakdown Voltage BC856, SBC856 Series V(BR)EBO −5.0 − − V (IE = −1.0 mA) BC857, SBC857 Series −5.0 − − BC858, NSVBC858, BC859 Series −5.0 − − Collector Cutoff Current (VCB = −30 V) ICBO − − −15 nA Collector Cutoff Current (VCB = −30 V, TA = 150°C) − − −4.0 mA
ON CHARACTERISTICS
DC Current Gain BC856A, SBC856A, BC857A, SBC857A, BC858A hFE − 90 − − (IC = −10 mA, VCE = −5.0 V) BC856B, SBC856B, BC857B, SBC857B, − 150 − BC858B, NSVBC858B BC857C, SBC857C BC858C − 270 − (IC = −2.0 mA, VCE = −5.0 V) BC856A, SBC856A, BC857A, 125 180 250 SBC857A, BC858A BC856B, SBC856B, BC857B, SBC857B, BC858B, 220 290 475 NSVBC858B, BC859B BC857C, SBC857C, BC858C, BC859C 420 520 800 Collector − Emitter Saturation Voltage VCE(sat) V (IC = −10 mA, IB = −0.5 mA) − − −0.3 (IC = −100 mA, IB = −5.0 mA) − − −0.65 Base − Emitter Saturation Voltage VBE(sat) V (IC = −10 mA, IB = −0.5 mA) − −0.7 − (IC = −100 mA, IB = −5.0 mA) − −0.9 − Base − Emitter On Voltage VBE(on) V (IC = −2.0 mA, VCE = −5.0 V) −0.6 − −0.75 (IC = −10 mA, VCE = −5.0 V) − − −0.82
SMALL− SIGNAL CHARACTERISTICS
Current − Gain − Bandwidth Product fT 100 − − MHz (IC = −10 mA, VCE = −5.0 Vdc, f = 100 MHz) Output Capacitance Cob − − 4.5 pF (VCB = −10 V, f = 1.0 MHz) Noise Figure NF dB (IC = −0.2 mA, VCE = −5.0 Vdc, RS = 2.0 kW, f = 1.0 kHz, BW = 200 Hz) BC856, SBC856, BC857, SBC857, BC858, NSVBC858 Series − − 10 BC859 Series − − 4.0 Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions.
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