Datasheet BC856BDW1T1G, SBC856BDW1T1G, BC857BDW1T1G, SBC857BDW1T1G, BC858CDW1T1G (ON Semiconductor) - 4

BC856BDW1T1G, SBC856BDW1T1G Series, BC857BDW1T1G, SBC857BDW1T1G Series, BC858CDW1T1G Series TYPICAL CHARACTERISTICS − BC857/SBC857/BC858
2.0 -1.0 -0.9 T 1.5 A = 25°C VCE = -10 V GAIN V TA = 25°C -0.8 BE(sat) @ IC/IB = 10 1.0 -0.7 TS) -0.6 VBE(on) @ VCE = -10 V 0.7 -0.5 TAGE (VOL 0.5 -0.4 , VOL V -0.3 -0.2 , NORMALIZED DC CURRENT 0.3 FEh -0.1 VCE(sat) @ IC/IB = 10 0.2 0 -0.2 -0.5 -1.0 -2.0 -5.0 -10 -20 -50 -100 -200 -0.1 -0.2 -0.5 -1.0 -2.0 -5.0 -10 -20 -50 -100 IC, COLLECTOR CURRENT (mAdc) IC, COLLECTOR CURRENT (mAdc)
Figure 7. Normalized DC Current Gain Figure 8. “Saturation” and “On” Voltages
-2.0 1.0 C) T ° -55°C to +125°C A = 25°C 1.2 TAGE (V) -1.6 (mV/ 1.6 -1.2 COEFFICIENT 2.0 I I I OR-EMITTER VOL -0.8 C = C = -50 mA C = -200 mA -10 mA TURE 2.4 IC = -100 mA I -0.4 C = -20 mA , COLLECT 2.8 CE , TEMPERA V VBθ 0 -0.02 -0.1 -1.0 -10 -20 -0.2 -1.0 -10 -100 IB, BASE CURRENT (mA) IC, COLLECTOR CURRENT (mA)
Figure 9. Collector Saturation Region Figure 10. Base−Emitter Temperature Coefficient
10 400 (MHz) Cib 300 7.0 TA = 25°C 200 5.0 150 VCE = -10 V TA = 25°C ANCE (pF) 100 C 3.0 ob 80 ACIT 60 2.0 C, CAP 40 30 1.0 20 T -0.4 f, CURRENT-GAIN - BANDWIDTH PRODUCT -0.6 -1.0 -2.0 -4.0 -6.0 -10 -20 -30 -40 -0.5 -1.0 -2.0 -3.0 -5.0 -10 -20 -30 -50 VR, REVERSE VOLTAGE (VOLTS) IC, COLLECTOR CURRENT (mAdc)
Figure 11. Capacitances Figure 12. Current−Gain − Bandwidth Product www.onsemi.com 4