Datasheet BC847BPN (Nexperia) - 8
| 制造商 | Nexperia |
| 描述 | NPN/PNP general-purpose transistor pair in a very small SOT363 (SC-88) Surface-Mounted Device (SMD) plastic package. |
| 页数 / 页 | 14 / 8 — Nexperia. BC847BPN. 45 V, 100 mA NPN/PNP general-purpose transistor. Fig … |
| 修订版 | 07082018 |
| 文件格式/大小 | PDF / 589 Kb |
| 文件语言 | 英语 |
Nexperia. BC847BPN. 45 V, 100 mA NPN/PNP general-purpose transistor. Fig 10. TR2 (PNP): DC current gain as a function of
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Nexperia BC847BPN 45 V, 100 mA NPN/PNP general-purpose transistor
006aab425 006aab426 600 −0.20 IB (mA) = −3.5 −3.15 IC − h (1) 2.8 − FE (A) 2.45 −2.1 −1.75 −0.15 −1.4 400 −1.05 (2) −0.7 −0.10 −0.35 200 (3) −0.05 0 0 −10−1 −103 −102 −1 −10 0 −1 −2 −3 −4 −5 IC (mA) VCE (V) VCE = −5 V Tamb = 25 °C (1) Tamb = 150 °C (2) Tamb = 25 °C (3) Tamb = −55 °C
Fig 10. TR2 (PNP): DC current gain as a function of Fig 11. TR2 (PNP): Collector current as a function of collector current; typical values collector-emitter voltage; typical values
− mld700 mld702 1200 −1200 VBE VBEsat mV (mV) −1000 −1000 (1) (1) − (2) 800 −800 (2) (3) −600 −600 − (3) 400 −400 −200 −200 −10−2 −10−1 −1 −10 −102 −103 −10−1 −1 −10 −102 −103 IC (mA) IC (mA) VCE = −5 V IC/IB = 20 (1) Tamb = −55 °C (1) Tamb = −55 °C (2) Tamb = 25 °C (2) Tamb = 25 °C (3) Tamb = 150 °C (3) Tamb = 150 °C
Fig 12. TR2 (PNP): Base-emitter voltage as a function Fig 13. TR2 (PNP): Base-emitter saturation voltage as of collector current; typical values a function of collector current; typical values
BC847BPN_4 © NNexperia B.V. 2017. All rights reserved
Product data sheet Rev. 04 — 18 February 2009 8 of 14
Document Outline 1. Product profile 1.1 General description 1.2 Features 1.3 Applications 1.4 Quick reference data 2. Pinning information 3. Ordering information 4. Marking 5. Limiting values 6. Thermal characteristics 7. Characteristics 8. Package outline 9. Packing information 10. Soldering 11. Revision history 12. Legal information 12.1 Data sheet status 12.2 Definitions 12.3 Disclaimers 12.4 Trademarks 13. Contact information 14. Contents
006aab425 006aab426 600 −0.20 IB (mA) = −3.5 −3.15 IC − h (1) 2.8 − FE (A) 2.45 −2.1 −1.75 −0.15 −1.4 400 −1.05 (2) −0.7 −0.10 −0.35 200 (3) −0.05 0 0 −10−1 −103 −102 −1 −10 0 −1 −2 −3 −4 −5 IC (mA) VCE (V) VCE = −5 V Tamb = 25 °C (1) Tamb = 150 °C (2) Tamb = 25 °C (3) Tamb = −55 °C
Fig 10. TR2 (PNP): DC current gain as a function of Fig 11. TR2 (PNP): Collector current as a function of collector current; typical values collector-emitter voltage; typical values
− mld700 mld702 1200 −1200 VBE VBEsat mV (mV) −1000 −1000 (1) (1) − (2) 800 −800 (2) (3) −600 −600 − (3) 400 −400 −200 −200 −10−2 −10−1 −1 −10 −102 −103 −10−1 −1 −10 −102 −103 IC (mA) IC (mA) VCE = −5 V IC/IB = 20 (1) Tamb = −55 °C (1) Tamb = −55 °C (2) Tamb = 25 °C (2) Tamb = 25 °C (3) Tamb = 150 °C (3) Tamb = 150 °C
Fig 12. TR2 (PNP): Base-emitter voltage as a function Fig 13. TR2 (PNP): Base-emitter saturation voltage as of collector current; typical values a function of collector current; typical values
BC847BPN_4 © NNexperia B.V. 2017. All rights reserved
Product data sheet Rev. 04 — 18 February 2009 8 of 14
Document Outline 1. Product profile 1.1 General description 1.2 Features 1.3 Applications 1.4 Quick reference data 2. Pinning information 3. Ordering information 4. Marking 5. Limiting values 6. Thermal characteristics 7. Characteristics 8. Package outline 9. Packing information 10. Soldering 11. Revision history 12. Legal information 12.1 Data sheet status 12.2 Definitions 12.3 Disclaimers 12.4 Trademarks 13. Contact information 14. Contents