Datasheet MAAM-011275-DIE (MACOM) - 2
| 制造商 | MACOM |
| 描述 | Wideband Distributed Amplifier |
| 页数 / 页 | 10 / 2 — MAAM-011275-DIE. Wideband Distributed Amplifier. 30 kHz - 40 GHz. Rev. V1 |
| 文件格式/大小 | PDF / 1.1 Mb |
| 文件语言 | 英语 |
MAAM-011275-DIE. Wideband Distributed Amplifier. 30 kHz - 40 GHz. Rev. V1
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MAAM-011275-DIE Wideband Distributed Amplifier 30 kHz - 40 GHz Rev. V1 Electrical Specifications: TC = 25 °C, VDD = 7 V, Z0 = 50 Ω Parameter Test Conditions Units Min. Typ. Max.
Gain 1 - 40 GHz dB 13.5 15 — Gain Flatness 1 - 40 GHz dB — ±0.75 — Input Return Loss 1 - 40 GHz dB — 15 — Output Return Loss 1 - 40 GHz dB — 13 — P1dB 22 GHz dBm — 21 — P3dB 22 GHz dBm 22.5 24 — Output IP3 PIN = +2 dBm / tone, 22 GHz dBm — 33 — tone spacing = 2 MHz Noise Figure 26 GHz 40 GHz dB — 5.3 6.8 — Drain Current3 Quiescent bias mA — 200 — 3. Set by adjusting VG1 as outlined in operating conditions on page 3.
Absolute Maximum Ratings4,5 Handling Procedures
Please observe the following precautions to avoid damage: Input Power6 17 dBm
Static Sensitivity
Drain Supply Voltage 10 V These electronic devices are sensitive to VG1 (VGAUX GND) -4 V < VG1 < 0 V electrostatic discharge (ESD) and can be damaged by static electricity. Proper ESD control techniques VG1 (VGAUX OPEN) -2 V < VG1 < 0 V should be used when handling these HBM Class 1A VG2 -3.5 V < VG2 < +4 V devices. Drain Supply Current 340 mA Junction Temperature7,8 +150°C Operating Temperature -40°C to +85°C Storage Temperature -65°C to +150°C 4. Exceeding any one or combination of these limits may cause permanent damage to this device. 5. MACOM does not recommend sustained operation near these survivability limits. 6. MACOM does not recommend sustained operation of power levels above 3 dB gain compression. 7. Operating at nominal conditions with TJ ≤ +150°C will ensure MTTF > 1 x 106 hours. 8. Junction Temperature (TJ) = TA + ӨJC * ((V * I) - (POUT - PIN)) Typical thermal resistance (ӨJC) = 11.9 °C/W. 2 MACOM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. Visit www.macom.com for additional data sheets and product information. For further information and support please visit:
https://www.macom.com/support
DC-0018857
Gain 1 - 40 GHz dB 13.5 15 — Gain Flatness 1 - 40 GHz dB — ±0.75 — Input Return Loss 1 - 40 GHz dB — 15 — Output Return Loss 1 - 40 GHz dB — 13 — P1dB 22 GHz dBm — 21 — P3dB 22 GHz dBm 22.5 24 — Output IP3 PIN = +2 dBm / tone, 22 GHz dBm — 33 — tone spacing = 2 MHz Noise Figure 26 GHz 40 GHz dB — 5.3 6.8 — Drain Current3 Quiescent bias mA — 200 — 3. Set by adjusting VG1 as outlined in operating conditions on page 3.
Absolute Maximum Ratings4,5 Handling Procedures
Please observe the following precautions to avoid damage: Input Power6 17 dBm
Static Sensitivity
Drain Supply Voltage 10 V These electronic devices are sensitive to VG1 (VGAUX GND) -4 V < VG1 < 0 V electrostatic discharge (ESD) and can be damaged by static electricity. Proper ESD control techniques VG1 (VGAUX OPEN) -2 V < VG1 < 0 V should be used when handling these HBM Class 1A VG2 -3.5 V < VG2 < +4 V devices. Drain Supply Current 340 mA Junction Temperature7,8 +150°C Operating Temperature -40°C to +85°C Storage Temperature -65°C to +150°C 4. Exceeding any one or combination of these limits may cause permanent damage to this device. 5. MACOM does not recommend sustained operation near these survivability limits. 6. MACOM does not recommend sustained operation of power levels above 3 dB gain compression. 7. Operating at nominal conditions with TJ ≤ +150°C will ensure MTTF > 1 x 106 hours. 8. Junction Temperature (TJ) = TA + ӨJC * ((V * I) - (POUT - PIN)) Typical thermal resistance (ӨJC) = 11.9 °C/W. 2 MACOM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. Visit www.macom.com for additional data sheets and product information. For further information and support please visit:
https://www.macom.com/support
DC-0018857