Datasheet NCD2400M (IXYS) - 6
| 制造商 | IXYS |
| 描述 | Wide Capacitance Range, Non-volatileDigital Programmable Capacitor |
| 页数 / 页 | 22 / 6 — NCD2400M. 2. Performance Data. Figure 1: Shunt and Series Capacitance vs. … |
| 文件格式/大小 | PDF / 414 Kb |
| 文件语言 | 英语 |
NCD2400M. 2. Performance Data. Figure 1: Shunt and Series Capacitance vs. Code. Capacitance vs. State. (f=10MHz)
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INTEGRATED CIRCUITS DIVISION
NCD2400M 2. Performance Data
Note: The performance data shown in the graphs below is the measured performance at ambient temperature. The typical shunt and series capacitance, in pF, varies as indicated in the following equations: C = C + C OUT 0 var C = 12.5 + 0.355 Code shunt C = 1.7 + 0.376 Code series Where Code = 0 to 511. Other performance aspects of the programmable capacitor are illustrated in the graphs below.
Figure 1: Shunt and Series Capacitance vs. Code Capacitance vs. State (f=10MHz)
200 150 100 Cshunt Cseries
Capacitance (pF)
50 0 0 100 200 300 400 500 600
Code
In shunt configuration, the parasitic capacitance from pin CP to GND adds up to the total equivalent capacitance of the device. The expected values are the ones defined by the above equation. In series configuration, though, this parasitic capacitor is not part of the equivalent impedance of the device, therefore the overall capacitance seen between CP and CN is smaller. 6
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R01 Document Outline Features Applications Description 1. Specifications 1.1 Package Pinout 1.2 Pin Descriptions 1.3 Absolute Maximum Ratings 1.4 Recommended Operating Conditions 1.5 ESD Rating 1.6 General Conditions for Electrical Characteristics 1.7 Capacitor Electrical Characteristics 1.8 Digital Interface: Electrical Characteristics of SDA and SCL 1.9 Digital Interface: AC Characteristics 1.10 Power Supply 2. Performance Data 3. Functional Description 3.1 Introduction 3.2 Capacitive Digital to Analog Converter (CDAC) 3.3 Non-Volatile Memory Configuration 3.4 Device Address 3.5 Operating Modes 3.5.1 Volatile Mode 3.5.2 Non-Volatile Mode 3.6 I2C Serial Interface 3.6.1 Write Commands 3.6.2 Write Volatile Register Operation 3.6.3 Write Non-Volatile Memory Operation 3.6.4 Read Operation 3.6.5 Set Non-Volatile Mode Operation 3.6.6 Electrical and Timing Considerations 3.6.7 Application Diagrams 3.7 Capacitor Interface Electrical and Biasing Considerations 4. Capacitance Determination and Programming Procedure 5. Manufacturing Information 5.1 Moisture Sensitivity 5.2 ESD Sensitivity 5.3 Soldering Profile 5.4 Board Wash 5.5 Mechanical Dimensions 5.5.1 Package Dimensions 5.5.2 Tape & Reel Specification
NCD2400M 2. Performance Data
Note: The performance data shown in the graphs below is the measured performance at ambient temperature. The typical shunt and series capacitance, in pF, varies as indicated in the following equations: C = C + C OUT 0 var C = 12.5 + 0.355 Code shunt C = 1.7 + 0.376 Code series Where Code = 0 to 511. Other performance aspects of the programmable capacitor are illustrated in the graphs below.
Figure 1: Shunt and Series Capacitance vs. Code Capacitance vs. State (f=10MHz)
200 150 100 Cshunt Cseries
Capacitance (pF)
50 0 0 100 200 300 400 500 600
Code
In shunt configuration, the parasitic capacitance from pin CP to GND adds up to the total equivalent capacitance of the device. The expected values are the ones defined by the above equation. In series configuration, though, this parasitic capacitor is not part of the equivalent impedance of the device, therefore the overall capacitance seen between CP and CN is smaller. 6
www.ixysic.com
R01 Document Outline Features Applications Description 1. Specifications 1.1 Package Pinout 1.2 Pin Descriptions 1.3 Absolute Maximum Ratings 1.4 Recommended Operating Conditions 1.5 ESD Rating 1.6 General Conditions for Electrical Characteristics 1.7 Capacitor Electrical Characteristics 1.8 Digital Interface: Electrical Characteristics of SDA and SCL 1.9 Digital Interface: AC Characteristics 1.10 Power Supply 2. Performance Data 3. Functional Description 3.1 Introduction 3.2 Capacitive Digital to Analog Converter (CDAC) 3.3 Non-Volatile Memory Configuration 3.4 Device Address 3.5 Operating Modes 3.5.1 Volatile Mode 3.5.2 Non-Volatile Mode 3.6 I2C Serial Interface 3.6.1 Write Commands 3.6.2 Write Volatile Register Operation 3.6.3 Write Non-Volatile Memory Operation 3.6.4 Read Operation 3.6.5 Set Non-Volatile Mode Operation 3.6.6 Electrical and Timing Considerations 3.6.7 Application Diagrams 3.7 Capacitor Interface Electrical and Biasing Considerations 4. Capacitance Determination and Programming Procedure 5. Manufacturing Information 5.1 Moisture Sensitivity 5.2 ESD Sensitivity 5.3 Soldering Profile 5.4 Board Wash 5.5 Mechanical Dimensions 5.5.1 Package Dimensions 5.5.2 Tape & Reel Specification