Datasheet MMBTA56, PZTA56 (ON Semiconductor) - 5
| 制造商 | ON Semiconductor |
| 描述 | PNP General Purpose Amplifier |
| 页数 / 页 | 9 / 5 |
| 修订版 | A |
| 文件格式/大小 | PDF / 405 Kb |
| 文件语言 | 英语 |
该数据表的模型线
文件文字版本
f T -GAIN BANDWIDTH PRODUCT (MHz) V CE -COLLECTOR-EMITTER VOLTAGE (V) 10 350 VCE = 5V 300 T A = 25°C 8 250 6 200 IC = 1 mA 100 mA 10 mA 150 4 100 2 0
3000 5000 10000 20000 30000 50000 50
0
1 10 100 IC -COLLECTOR CURRENT (mA) I B -BASE CURRENT (uA) Figure 10. Gain Bandwidth Product
vs. Collector Current Figure 9. Collector Saturation Region P D -POWER DISSIPATION (W) 1 SOT-223 0.75 TO-92 0.5
SOT-23 0.25 0 0 25 50
75
100
TEMPERATURE ( oC) 125 150 Figure 11. Power Dissipation vs.
Ambient Temperature © 1997 Fairchild Semiconductor Corporation
MMBTA56 / PZTA56 Rev. 1.4 www.fairchildsemi.com
4 MMBTA56 / PZTA56 — PNP General-Purpose Amplifier Typical Performance Characteristics (Continued)
3000 5000 10000 20000 30000 50000 50
0
1 10 100 IC -COLLECTOR CURRENT (mA) I B -BASE CURRENT (uA) Figure 10. Gain Bandwidth Product
vs. Collector Current Figure 9. Collector Saturation Region P D -POWER DISSIPATION (W) 1 SOT-223 0.75 TO-92 0.5
SOT-23 0.25 0 0 25 50
75
100
TEMPERATURE ( oC) 125 150 Figure 11. Power Dissipation vs.
Ambient Temperature © 1997 Fairchild Semiconductor Corporation
MMBTA56 / PZTA56 Rev. 1.4 www.fairchildsemi.com
4 MMBTA56 / PZTA56 — PNP General-Purpose Amplifier Typical Performance Characteristics (Continued)