Datasheet 2N7000 (NTE Electronics)
| 制造商 | NTE Electronics |
| 描述 | N−Ch, Enhancement Mode Field Effect TransistorTO−92 Type Package |
| 页数 / 页 | 2 / 1 — 2N7000. N−Ch, Enhancement Mode. Field Effect Transistor. TO−92 Type … |
| 文件格式/大小 | PDF / 62 Kb |
| 文件语言 | 英语 |
2N7000. N−Ch, Enhancement Mode. Field Effect Transistor. TO−92 Type Package. Features:. Absolute Maximum Ratings:
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2N7000 N−Ch, Enhancement Mode Field Effect Transistor
D
TO−92 Type Package Features:
D High Density Cell Design for Low RDS(ON) G D Voltage Controlled Small Signal Switch D Rugged and Reliable S D High Saturation Current Capability
Absolute Maximum Ratings:
(TA = +25C unless otherwise specified) Drain−Source Voltage, VDSS . 60V Drain−Gate Voltage (RGS 1M), VDGR . 60V Gate−Source Voltage, VGS Continuous . 20V Non−Repetitive (tp 50s) . 40V Maximum Drain Current, ID Continuous . 200mA Pulsed . 500mA Maximum Power Dissipation, PD . 400mW Derate above 25C . 3.2mW/C Operating Junction Temperature Range, TJ . −55 to +150C Storage Temperature Range, Tstg . −55 to +150C Thermal Resistance, Junction−to−Ambient, Rth(JA) . 312.5C/W Maximum Lead Temperature for Soldering Purposes, 1/16” from Case, 10sec), TL . +300C
Electrical Characteristics:
(TA = +25C unless otherwise specified)
Parameter Symbol Test Conditions Min Typ Max Unit OFF Characteristics
Drain−Source Breakdown Voltage BVDss VGS = 0V, ID = 10A 60 − − V Zero−Gate−Voltage Drain Current IDSS VDS = 48V, − − 1.0 A VGS = 0 TJ = +125C − − 1.0 mA Gate−Body Leakage Current, Forward IGSSF VGSF = 15V, VDS = 0 − − 10 nA Gate−Body Leakage Current, Reverse IGSSR VGSF = −15V, VDS = 0 − − −10 nA
D
TO−92 Type Package Features:
D High Density Cell Design for Low RDS(ON) G D Voltage Controlled Small Signal Switch D Rugged and Reliable S D High Saturation Current Capability
Absolute Maximum Ratings:
(TA = +25C unless otherwise specified) Drain−Source Voltage, VDSS . 60V Drain−Gate Voltage (RGS 1M), VDGR . 60V Gate−Source Voltage, VGS Continuous . 20V Non−Repetitive (tp 50s) . 40V Maximum Drain Current, ID Continuous . 200mA Pulsed . 500mA Maximum Power Dissipation, PD . 400mW Derate above 25C . 3.2mW/C Operating Junction Temperature Range, TJ . −55 to +150C Storage Temperature Range, Tstg . −55 to +150C Thermal Resistance, Junction−to−Ambient, Rth(JA) . 312.5C/W Maximum Lead Temperature for Soldering Purposes, 1/16” from Case, 10sec), TL . +300C
Electrical Characteristics:
(TA = +25C unless otherwise specified)
Parameter Symbol Test Conditions Min Typ Max Unit OFF Characteristics
Drain−Source Breakdown Voltage BVDss VGS = 0V, ID = 10A 60 − − V Zero−Gate−Voltage Drain Current IDSS VDS = 48V, − − 1.0 A VGS = 0 TJ = +125C − − 1.0 mA Gate−Body Leakage Current, Forward IGSSF VGSF = 15V, VDS = 0 − − 10 nA Gate−Body Leakage Current, Reverse IGSSR VGSF = −15V, VDS = 0 − − −10 nA