Datasheet NTE491, NTE491SM (NTE Electronics) - 2
| 制造商 | NTE Electronics |
| 描述 | MOSFET N−Ch, Enhancement Mode High Speed Switch |
| 页数 / 页 | 3 / 2 — Electrical Characteristics:. Parameter. Symbol. Test Conditions. Min. … |
| 文件格式/大小 | PDF / 92 Kb |
| 文件语言 | 英语 |
Electrical Characteristics:. Parameter. Symbol. Test Conditions. Min. Typ. Max. Unit. OFF Characteristics. ON Characteristics
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Electrical Characteristics:
(TA = +25°C unless otherwise specified)
Parameter Symbol Test Conditions Min Typ Max Unit OFF Characteristics
Drain−Source Breakdown Voltage V(BR)DSS VGS = 0, ID = 10µA 60 − − V Zero−Gate−Voltage Drain Current NTE491 IDSS VDS = 48V, − − 1.0 µA V GS 0 = 0 TJ = +125°C − − 1.0 mA NTE491SM VDS = 60V, − − 1.0 µA V GS 0 = 0 TJ = +125°C − − 0.5 mA Gate−Body Leakage Current, Forward NTE491 IGSSF VGSF = 15V, VDS = 0 − − 10 nA NTE491SM VGSF = 20V, VDS = 0 − − 100 nA Gate−Body Leakage Current, Reverse NTE491 IGSSR VGSF = −15V, VDS = 0 − − −10 nA NTE491SM VGSF = −20V, VDS = 0 − − −100 nA
ON Characteristics
(Note 1) Gate Threshold Voltage NTE491 VGS(Th) ID = 1mA, VDS = VGS 0.8 − 3.0 V NTE491SM ID = 250µA, VDS = VGS 1.0 2.1 2.5 V Static Drain−Source ON Resistance NTE491 rDS(on) VGS = 10V, − 1.2 5.0 Ω ID 500mA = 500mA TJ = +125°C − 1.9 9.0 Ω VGS = 4.5V, ID = 75mA − 1.8 5.3 Ω NTE491SM VGS = 10V, − 1.2 7.5 Ω ID 500mA = 500mA TJ = +100°C − 1.7 13.5 Ω Drain−Source ON−Voltage NTE491 VDS(on) VGS = 10V, ID = 500mA − 0.6 2.5 V VGS = 4.5V, ID = 75mA − 0.14 0.45 V NTE491SM VGS = 10V, ID = 500mA − 0.6 3.75 V VGS = 4.5V, ID = 75mA − 0.9 1.5 V ON−State Drain Current NTE491 Id(on) VGS = 4.5V, VDS = 10V 75 600 − mA NTE491SM VGS = 10V, VDS ≥ 2 VDS(on) 500 2700 − mA Forward Transconductance NTE491 gfs VDS = 10V, ID = 200mA 100 320 − µmhos NTE491SM VDS ≥ 2 VDS(on), ID = 200mA 80 320 − µmhos
Dynamic Characteristics
Input Capacitance Ciss VDS = 25V, VGS = 0, f = 1MHz − 20 50 pF Reverse Transfer Capacitance Coss − 11 25 pF Output Capacitance Crss − 4 5 pF Note 1. Pulse Test: Pulse Width ≤ 300µs, Duty Cycle ≤ 2%.
(TA = +25°C unless otherwise specified)
Parameter Symbol Test Conditions Min Typ Max Unit OFF Characteristics
Drain−Source Breakdown Voltage V(BR)DSS VGS = 0, ID = 10µA 60 − − V Zero−Gate−Voltage Drain Current NTE491 IDSS VDS = 48V, − − 1.0 µA V GS 0 = 0 TJ = +125°C − − 1.0 mA NTE491SM VDS = 60V, − − 1.0 µA V GS 0 = 0 TJ = +125°C − − 0.5 mA Gate−Body Leakage Current, Forward NTE491 IGSSF VGSF = 15V, VDS = 0 − − 10 nA NTE491SM VGSF = 20V, VDS = 0 − − 100 nA Gate−Body Leakage Current, Reverse NTE491 IGSSR VGSF = −15V, VDS = 0 − − −10 nA NTE491SM VGSF = −20V, VDS = 0 − − −100 nA
ON Characteristics
(Note 1) Gate Threshold Voltage NTE491 VGS(Th) ID = 1mA, VDS = VGS 0.8 − 3.0 V NTE491SM ID = 250µA, VDS = VGS 1.0 2.1 2.5 V Static Drain−Source ON Resistance NTE491 rDS(on) VGS = 10V, − 1.2 5.0 Ω ID 500mA = 500mA TJ = +125°C − 1.9 9.0 Ω VGS = 4.5V, ID = 75mA − 1.8 5.3 Ω NTE491SM VGS = 10V, − 1.2 7.5 Ω ID 500mA = 500mA TJ = +100°C − 1.7 13.5 Ω Drain−Source ON−Voltage NTE491 VDS(on) VGS = 10V, ID = 500mA − 0.6 2.5 V VGS = 4.5V, ID = 75mA − 0.14 0.45 V NTE491SM VGS = 10V, ID = 500mA − 0.6 3.75 V VGS = 4.5V, ID = 75mA − 0.9 1.5 V ON−State Drain Current NTE491 Id(on) VGS = 4.5V, VDS = 10V 75 600 − mA NTE491SM VGS = 10V, VDS ≥ 2 VDS(on) 500 2700 − mA Forward Transconductance NTE491 gfs VDS = 10V, ID = 200mA 100 320 − µmhos NTE491SM VDS ≥ 2 VDS(on), ID = 200mA 80 320 − µmhos
Dynamic Characteristics
Input Capacitance Ciss VDS = 25V, VGS = 0, f = 1MHz − 20 50 pF Reverse Transfer Capacitance Coss − 11 25 pF Output Capacitance Crss − 4 5 pF Note 1. Pulse Test: Pulse Width ≤ 300µs, Duty Cycle ≤ 2%.