Datasheet NTE128, NTE129 (NTE Electronics)
| 制造商 | NTE Electronics |
| 描述 | Silicon Complementary Small Signal Bipolar Transistors. Audio Output, Video, Driver |
| 页数 / 页 | 3 / 1 — NTE128 (NPN) & NTE129 (PNP). Silicon Complementary Transistors. Audio … |
| 文件格式/大小 | PDF / 28 Kb |
| 文件语言 | 英语 |
NTE128 (NPN) & NTE129 (PNP). Silicon Complementary Transistors. Audio Output, Video, Driver. Description:
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NTE128 (NPN) & NTE129 (PNP) Silicon Complementary Transistors Audio Output, Video, Driver Description:
The NTE128 (NPN) and NTE129 (PNP) are silicon complementary transistors in a TO39 type pack- age designed primarily for amplifier and switching applications. These devices features high break- down voltages, low leakage currents, low capacity, and a beta useful over an extremely wide current range.
Absolute Maximum Ratings:
Collector–Emitter Voltage, VCEO . 80V Collector–Base Voltage, VCBO NTE128 . 140V NTE129 . 80V Emitter–Base Voltage, VEBO NTE128 . 7V NTE129 . 5V Continuous Collector Current, IC . 1A Total Device Dissipation (TA = +25°C), PD NTE128 . 0.8W Derate Above 25°C . 4.6mW/°C NTE129 . 1.25W Derate Above 25°C . 7.15mW/°C Total Device Dissipation (TC = +25°C), PD NTE128 . 5W Derate Above 25°C . 28.6mW/°C NTE129 . 7W Derate Above 25°C . 40mW/°C Operating Junction Temperature Range, TJ . –65° to +200°C Storage Temperature Range, Tstg . –65° to +200°C Thermal Resistance, Junction–to–Case, RthJC NTE128 . 16.5°C/W NTE129 . 20°C/W Thermal Resistance, Junction–to–Ambient, RthJA NTE128 . 89.5°C/W NTE129 . 140°C/W Lead Temperature (During Soldering, 1/16” from case, 60sec max), TL . +300°C Note 1. NTE129MCP is a matched complementary pair containing 1 each of NTE128 (NPN) and NTE129 (PNP).
The NTE128 (NPN) and NTE129 (PNP) are silicon complementary transistors in a TO39 type pack- age designed primarily for amplifier and switching applications. These devices features high break- down voltages, low leakage currents, low capacity, and a beta useful over an extremely wide current range.
Absolute Maximum Ratings:
Collector–Emitter Voltage, VCEO . 80V Collector–Base Voltage, VCBO NTE128 . 140V NTE129 . 80V Emitter–Base Voltage, VEBO NTE128 . 7V NTE129 . 5V Continuous Collector Current, IC . 1A Total Device Dissipation (TA = +25°C), PD NTE128 . 0.8W Derate Above 25°C . 4.6mW/°C NTE129 . 1.25W Derate Above 25°C . 7.15mW/°C Total Device Dissipation (TC = +25°C), PD NTE128 . 5W Derate Above 25°C . 28.6mW/°C NTE129 . 7W Derate Above 25°C . 40mW/°C Operating Junction Temperature Range, TJ . –65° to +200°C Storage Temperature Range, Tstg . –65° to +200°C Thermal Resistance, Junction–to–Case, RthJC NTE128 . 16.5°C/W NTE129 . 20°C/W Thermal Resistance, Junction–to–Ambient, RthJA NTE128 . 89.5°C/W NTE129 . 140°C/W Lead Temperature (During Soldering, 1/16” from case, 60sec max), TL . +300°C Note 1. NTE129MCP is a matched complementary pair containing 1 each of NTE128 (NPN) and NTE129 (PNP).