Datasheet 2N4033 (Multicomp) - 2
| 制造商 | Multicomp |
| 描述 | General Purpose PNP Transistor |
| 页数 / 页 | 4 / 2 — Absolute Maximum Ratings (Ta = 25°C unless specified otherwise). … |
| 文件格式/大小 | PDF / 264 Kb |
| 文件语言 | 英语 |
Absolute Maximum Ratings (Ta = 25°C unless specified otherwise). Parameter. Symbol. Rating. Units
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文件文字版本
2N4033 General Purpose Transistor
Absolute Maximum Ratings (Ta = 25°C unless specified otherwise) Parameter Symbol Rating Units
Collector Emitter Voltage VCEO 80 Collector Base Voltage VCBO V Emitter Base Voltage VEBO 5 Collector Current ICM 1 A Power Dissipation at Ta = 25°C 800 mW Derate above 25°C 4.6 mW/°C PD Power Dissipation at Tc = 25°C 4 W Derate above 25°C 22.85 mW/°C Operating and Storage Junction T Temperature Range j, Tstg -65 to +200 °C
Electrical Characteristics (Ta = 25°C unless specified otherwise) Parameter Symbol Test Condition Minimum Maximum Units
Collector Emitter Breakdown Voltage BVCEO* IC = 10mA, IB = 0 - 80 Collector Base Breakdown Voltage BVCBO IC = 10µA, IE = 0 - V Emitter Base Breakdown Voltage BVEBO IE = 10µA, IC = 0 5 - V 50 nA Collector Leakage Current I CB = 60V, IE = 0 CBO - VCB = 60V, TA = 150ºC 50 µA Emitter Leakage Current IEBO VEB = 5V, IC = 0 - 10 µA I 0.15 Collector Emitter Saturation Voltage V C = 150mA, IB = 15mA CE(Sat) * IC = 500mA, IB = 50mA 0.5 V Base Emitter Saturation Voltage VBE(Sat) * IC = 150mA, IB = 15mA - 0.9 Base Emitter On Voltage VBE(on) * IC = 500mA, VCE = 0.5V - 1.1 IC = 100mA, VCE = 5V 75 I 100 300 DC Current Gain h C = 100mA, VCE = 5V FE* - IC = 100mA, VCE = 5V, Ta = -55°C 40 IC = 1A, VCE = 5V 25
Small Signal Characteristics
Transition Frequency fT IC = 50mA, VCE = 10V, f = 100MHz 150 500 MHz Output Capacitance Cob VCB = 10V, IE = 0, f = 1MHz - 20 pF Input Capacitance Cib VBE = 0.5V, IC = 0, f = 1MHz - 110 Turn on Time IC = 500mA, IB1 = 50mA - 100 ton Storage Time IC = 500mA, IB1 = IB2 = 50mA - 350 nS Fall Time tf IC = 500mA, IB1 = IB2 = 50mA - 50 *Pulse Test: Pulse Width ≤300µs, Duty Cycle ≤2% Page 2 31/05/05 V1.0
Absolute Maximum Ratings (Ta = 25°C unless specified otherwise) Parameter Symbol Rating Units
Collector Emitter Voltage VCEO 80 Collector Base Voltage VCBO V Emitter Base Voltage VEBO 5 Collector Current ICM 1 A Power Dissipation at Ta = 25°C 800 mW Derate above 25°C 4.6 mW/°C PD Power Dissipation at Tc = 25°C 4 W Derate above 25°C 22.85 mW/°C Operating and Storage Junction T Temperature Range j, Tstg -65 to +200 °C
Electrical Characteristics (Ta = 25°C unless specified otherwise) Parameter Symbol Test Condition Minimum Maximum Units
Collector Emitter Breakdown Voltage BVCEO* IC = 10mA, IB = 0 - 80 Collector Base Breakdown Voltage BVCBO IC = 10µA, IE = 0 - V Emitter Base Breakdown Voltage BVEBO IE = 10µA, IC = 0 5 - V 50 nA Collector Leakage Current I CB = 60V, IE = 0 CBO - VCB = 60V, TA = 150ºC 50 µA Emitter Leakage Current IEBO VEB = 5V, IC = 0 - 10 µA I 0.15 Collector Emitter Saturation Voltage V C = 150mA, IB = 15mA CE(Sat) * IC = 500mA, IB = 50mA 0.5 V Base Emitter Saturation Voltage VBE(Sat) * IC = 150mA, IB = 15mA - 0.9 Base Emitter On Voltage VBE(on) * IC = 500mA, VCE = 0.5V - 1.1 IC = 100mA, VCE = 5V 75 I 100 300 DC Current Gain h C = 100mA, VCE = 5V FE* - IC = 100mA, VCE = 5V, Ta = -55°C 40 IC = 1A, VCE = 5V 25
Small Signal Characteristics
Transition Frequency fT IC = 50mA, VCE = 10V, f = 100MHz 150 500 MHz Output Capacitance Cob VCB = 10V, IE = 0, f = 1MHz - 20 pF Input Capacitance Cib VBE = 0.5V, IC = 0, f = 1MHz - 110 Turn on Time IC = 500mA, IB1 = 50mA - 100 ton Storage Time IC = 500mA, IB1 = IB2 = 50mA - 350 nS Fall Time tf IC = 500mA, IB1 = IB2 = 50mA - 50 *Pulse Test: Pulse Width ≤300µs, Duty Cycle ≤2% Page 2 31/05/05 V1.0