Datasheet SDP8406 (Honeywell) - 3
| 制造商 | Honeywell |
| 描述 | Silicon Phototransistor, Side-looking Clear Plastic Package |
| 页数 / 页 | 4 / 3 — SDP8406 Silicon Phototransistor. SWITCHING TIME TEST CIRCUIT. SWITCHING … |
| 文件格式/大小 | PDF / 469 Kb |
| 文件语言 | 英语 |
SDP8406 Silicon Phototransistor. SWITCHING TIME TEST CIRCUIT. SWITCHING WAVEFORM
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SDP8406 Silicon Phototransistor SWITCHING TIME TEST CIRCUIT SWITCHING WAVEFORM
cir_015.cdr cir_004.cdr Fig. 1 Responsivity vs Fig. 2 Collector Current vs Angular Displacement gra_054.ds4 Ambient Temperature gra_039.ds4 1.0 2.0 0.9 r e s 0.8 to 1.6 n c o 0.7 p lle s 0.6 o t c n 1.2 re 0.5 d e e rre tiv 0.4 liz u c 0.8 la a e 0.3 R rm 0.2 o N 0.4 0.1 0.0 0.0 -60 -45 -30 -15 0 +15 +30 +45 +60 0 10 20 30 40 50 60 70 80 Angular displacement - degrees Ambient temperature - °C Fig. 3 Dark Current vs Fig. 4 Non-Saturated Switching Time vs Temperature gra_301.cdr Load Resistance gra_041.ds4 100 s - µ e tim e s 10 n o p s e R 1 10 100 1000 10000 Load resistance - Ohms Honeywell reserves the right to make changes in order to improve design and 122 h supply the best products possible.
cir_015.cdr cir_004.cdr Fig. 1 Responsivity vs Fig. 2 Collector Current vs Angular Displacement gra_054.ds4 Ambient Temperature gra_039.ds4 1.0 2.0 0.9 r e s 0.8 to 1.6 n c o 0.7 p lle s 0.6 o t c n 1.2 re 0.5 d e e rre tiv 0.4 liz u c 0.8 la a e 0.3 R rm 0.2 o N 0.4 0.1 0.0 0.0 -60 -45 -30 -15 0 +15 +30 +45 +60 0 10 20 30 40 50 60 70 80 Angular displacement - degrees Ambient temperature - °C Fig. 3 Dark Current vs Fig. 4 Non-Saturated Switching Time vs Temperature gra_301.cdr Load Resistance gra_041.ds4 100 s - µ e tim e s 10 n o p s e R 1 10 100 1000 10000 Load resistance - Ohms Honeywell reserves the right to make changes in order to improve design and 122 h supply the best products possible.