Datasheet BSC034N06NS (Infineon)
| 制造商 | Infineon |
| 描述 | OptiMOS Power-Transistor |
| 页数 / 页 | 10 / 1 — BSC034N06NS. OptiMOSTM Power-Transistor. Features. Product Summary. … |
| 修订版 | 02_00 |
| 文件格式/大小 | PDF / 501 Kb |
| 文件语言 | 英语 |
BSC034N06NS. OptiMOSTM Power-Transistor. Features. Product Summary. Maximum ratings,. Parameter. Symbol Conditions. Value. Unit
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BSC034N06NS OptiMOSTM Power-Transistor Features Product Summary
• Optimized for high performance SMPS, e.g. sync. rec. V 60 V DS • 100% avalanche tested R 3.4 DS(on),max mW • Superior thermal resistance I 100 A D • N-channel Q 37 nC OSS • Qualified according to JEDEC1) for target applications Q (0V..10V) 33 nC G • Pb-free lead plating; RoHS compliant • Halogen-free according to IEC61249-2-21 PG-TDSON-8 Type Package Marking BSC034N06NS PG-TDSON-8 034N06NS
Maximum ratings,
at T j=25 °C, unless otherwise specified
Parameter Symbol Conditions Value Unit
Continuous drain current I D V GS=10 V, T C=25 °C 100 A V GS=10 V, T C=100 °C 71 V GS=10 V, T C=25 °C, 21 R thJA =50K/W2) Pulsed drain current3) I D,pulse T C=25 °C 400 Avalanche energy, single pulse4) E AS I D=50 A, R GS=25 W 71 mJ Gate source voltage V GS ±20 V 1) J-STD20 and JESD22 2) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain connection. PCB is vertical in still air. 3) See figure 3 for more detailed information 4) See figure 13 for more detailed information Rev.2.0 page 1 2013-10-17
BSC034N06NS OptiMOSTM Power-Transistor Features Product Summary
• Optimized for high performance SMPS, e.g. sync. rec. V 60 V DS • 100% avalanche tested R 3.4 DS(on),max mW • Superior thermal resistance I 100 A D • N-channel Q 37 nC OSS • Qualified according to JEDEC1) for target applications Q (0V..10V) 33 nC G • Pb-free lead plating; RoHS compliant • Halogen-free according to IEC61249-2-21 PG-TDSON-8 Type Package Marking BSC034N06NS PG-TDSON-8 034N06NS
Maximum ratings,
at T j=25 °C, unless otherwise specified
Parameter Symbol Conditions Value Unit
Continuous drain current I D V GS=10 V, T C=25 °C 100 A V GS=10 V, T C=100 °C 71 V GS=10 V, T C=25 °C, 21 R thJA =50K/W2) Pulsed drain current3) I D,pulse T C=25 °C 400 Avalanche energy, single pulse4) E AS I D=50 A, R GS=25 W 71 mJ Gate source voltage V GS ±20 V 1) J-STD20 and JESD22 2) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain connection. PCB is vertical in still air. 3) See figure 3 for more detailed information 4) See figure 13 for more detailed information Rev.2.0 page 1 2013-10-17