Datasheet Si2312CDS (Vishay) - 3
| 制造商 | Vishay |
| 描述 | N-Channel 20 V (D-S) MOSFET |
| 页数 / 页 | 10 / 3 — Si2312CDS. TYPICAL CHARACTERISTICS. Output Characteristics. Transfer … |
| 文件格式/大小 | PDF / 239 Kb |
| 文件语言 | 英语 |
Si2312CDS. TYPICAL CHARACTERISTICS. Output Characteristics. Transfer Characteristics
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Si2312CDS
www.vishay.com Vishay Siliconix
TYPICAL CHARACTERISTICS
(25 °C, unless otherwise noted) 20 5 VGS = 5 V thru 2 V 4 15 VGS = 1.5 V (A) (A) 3 Current 10 Current 2 - Drain - Drain I D I D 5 TC = 25 °C 1 TC = 125 °C VGS = 1 V TC = - 55 °C 0 0 0.0 0.5 1.0 1.5 2.0 0.0 0.3 0.6 0.9 1.2 1.5 VDS - Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V)
Output Characteristics Transfer Characteristics
0.045 1200 ) 0.040 Ciss (Ω 900 VGS = 1.8 V (pF) tance is 0.035 s e -R 600 VGS = 2.5 V - On 0.030 ) n (o VGS = 4.5 V S C - Capacitance DR 300 0.025 Coss Crss 0.020 0 0 5 10 15 20 0 5 10 15 20 ID - Drain Current (A) VDS - Drain-to-Source Voltage (V)
On-Resistance vs. Drain Current and Gate Voltage Capacitance
5 1.70 ID = 5 A (V) 4 VGS = 2.5 V, I = 4.7 A D 1.45 oltage VDS = 10 V V tance 3 is s e VDS = 5 V ource -R 1.20 -S -to - On 2 ) n (Normalized) VGS = 4.5 V, ID = 5 A ate V (o DS = 16 V G S - DR 0.95 GS 1 V 0 0.70 0 2 4 6 8 10 - 50 - 25 0 25 50 75 100 125 150 Qg - Total Gate Charge (nC) TJ - Junction Temperature (°C)
Gate Charge On-Resistance vs. Junction Temperature
S10-0641-Rev. A, 22-Mar-10
3
Document Number: 65900 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
www.vishay.com Vishay Siliconix
TYPICAL CHARACTERISTICS
(25 °C, unless otherwise noted) 20 5 VGS = 5 V thru 2 V 4 15 VGS = 1.5 V (A) (A) 3 Current 10 Current 2 - Drain - Drain I D I D 5 TC = 25 °C 1 TC = 125 °C VGS = 1 V TC = - 55 °C 0 0 0.0 0.5 1.0 1.5 2.0 0.0 0.3 0.6 0.9 1.2 1.5 VDS - Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V)
Output Characteristics Transfer Characteristics
0.045 1200 ) 0.040 Ciss (Ω 900 VGS = 1.8 V (pF) tance is 0.035 s e -R 600 VGS = 2.5 V - On 0.030 ) n (o VGS = 4.5 V S C - Capacitance DR 300 0.025 Coss Crss 0.020 0 0 5 10 15 20 0 5 10 15 20 ID - Drain Current (A) VDS - Drain-to-Source Voltage (V)
On-Resistance vs. Drain Current and Gate Voltage Capacitance
5 1.70 ID = 5 A (V) 4 VGS = 2.5 V, I = 4.7 A D 1.45 oltage VDS = 10 V V tance 3 is s e VDS = 5 V ource -R 1.20 -S -to - On 2 ) n (Normalized) VGS = 4.5 V, ID = 5 A ate V (o DS = 16 V G S - DR 0.95 GS 1 V 0 0.70 0 2 4 6 8 10 - 50 - 25 0 25 50 75 100 125 150 Qg - Total Gate Charge (nC) TJ - Junction Temperature (°C)
Gate Charge On-Resistance vs. Junction Temperature
S10-0641-Rev. A, 22-Mar-10
3
Document Number: 65900 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000