Datasheet TB67S111PG (Toshiba) - 8
| 制造商 | Toshiba |
| 描述 | BiCD Integrated Circuit Silicon Monolithic |
| 页数 / 页 | 15 / 8 — Electrical Characteristics 1 (Ta=25°C and VM=24 V, unless otherwise … |
| 文件格式/大小 | PDF / 315 Kb |
| 文件语言 | 英语 |
Electrical Characteristics 1 (Ta=25°C and VM=24 V, unless otherwise specified.)
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TB67S111PG
Electrical Characteristics 1 (Ta=25°C and VM=24 V, unless otherwise specified.)
Characteristics Symbol Test condition Min Typ. Max Unit VIH Logic input voltage High level (Note) 2.0 ― 5.5 V Logic input voltage VIL Logic input voltage Low level (Note) GND ― 0.8 V Input hysteresis voltage VIN(HYS) Logic input pin (Note) 100 ― 300 mV High IIN(H) Logic input voltage High level (VIN=3.3 V) ― 33 55 μA Logic input current Low IIN(L) Logic input voltage Low level (VIN=0 V) ― ― 1 μA Output pins: open, in normal operation, IM consumption current IM ― 3.0 5.0 mA motor output-stage operation Remaining voltage of ERR VOD(L) IOD=10 mA 0 ― 0.5 V output Regenerative diode forward VFN IOUT=1.5 A 0.9 1.1 1.5 V voltage Output MOSFET Ileak VOUT=80 V, Output MOSFET: OFF ― ― 1 μA OFF leakage current Output MOSFET RON Between drain and source IOUT=1.5 A ― 0.25 0.35 Ω (D-S) On-resistance Note: VIH is defined as the VIN voltage that causes the outputs to change when the voltage of the test pin is gradually raised from 0 V. VIL is defined as the VIN voltage that causes the outputs to change when the voltage of the pin is then gradually lowered. The difference between VIL and VIH is defined as the input hysteresis(VIN(HYS)).
Electrical Characteristics 2 (Ta=25°C and VM=24 V, unless otherwise specified.)
Characteristics Symbol Test condition Min Typ. Max Unit VCC pin current ICC 4.75 V≤VCC≤5.25 V ― 2.5 5.0 mA Temperature threshold of thermal shutdown detection (TSD) (Note 1) TjTSD ― 155 170 185 °C VM recovery voltage VMR ― 7.0 8.0 9.0 V Over current detection (ISD) threshold (Note 2) ISD (Design value) 2.1 3.0 5.0 A Note 1: Thermal shutdown (TSD) When the junction temperature of the IC reaches the TSD threshold, the TSD circuit operates and turns off the output transistors. Noise rejection blanking time is provided to avoid misdetection by switching. The IC operation recovers automatically after specified recovery time passes. The TSD circuit is a backup function to detect a thermal error, therefore it is not recommended to be used aggressively. Note 2: Over-current detection (ISD) When the output current reaches the threshold, the ISD circuit operates and turns off the output transistors. Noise rejection blanking time is provided to avoid misdetection by switching. The IC operation recovers automatically after specified recovery time passes. 8 2017-08-04
Electrical Characteristics 1 (Ta=25°C and VM=24 V, unless otherwise specified.)
Characteristics Symbol Test condition Min Typ. Max Unit VIH Logic input voltage High level (Note) 2.0 ― 5.5 V Logic input voltage VIL Logic input voltage Low level (Note) GND ― 0.8 V Input hysteresis voltage VIN(HYS) Logic input pin (Note) 100 ― 300 mV High IIN(H) Logic input voltage High level (VIN=3.3 V) ― 33 55 μA Logic input current Low IIN(L) Logic input voltage Low level (VIN=0 V) ― ― 1 μA Output pins: open, in normal operation, IM consumption current IM ― 3.0 5.0 mA motor output-stage operation Remaining voltage of ERR VOD(L) IOD=10 mA 0 ― 0.5 V output Regenerative diode forward VFN IOUT=1.5 A 0.9 1.1 1.5 V voltage Output MOSFET Ileak VOUT=80 V, Output MOSFET: OFF ― ― 1 μA OFF leakage current Output MOSFET RON Between drain and source IOUT=1.5 A ― 0.25 0.35 Ω (D-S) On-resistance Note: VIH is defined as the VIN voltage that causes the outputs to change when the voltage of the test pin is gradually raised from 0 V. VIL is defined as the VIN voltage that causes the outputs to change when the voltage of the pin is then gradually lowered. The difference between VIL and VIH is defined as the input hysteresis(VIN(HYS)).
Electrical Characteristics 2 (Ta=25°C and VM=24 V, unless otherwise specified.)
Characteristics Symbol Test condition Min Typ. Max Unit VCC pin current ICC 4.75 V≤VCC≤5.25 V ― 2.5 5.0 mA Temperature threshold of thermal shutdown detection (TSD) (Note 1) TjTSD ― 155 170 185 °C VM recovery voltage VMR ― 7.0 8.0 9.0 V Over current detection (ISD) threshold (Note 2) ISD (Design value) 2.1 3.0 5.0 A Note 1: Thermal shutdown (TSD) When the junction temperature of the IC reaches the TSD threshold, the TSD circuit operates and turns off the output transistors. Noise rejection blanking time is provided to avoid misdetection by switching. The IC operation recovers automatically after specified recovery time passes. The TSD circuit is a backup function to detect a thermal error, therefore it is not recommended to be used aggressively. Note 2: Over-current detection (ISD) When the output current reaches the threshold, the ISD circuit operates and turns off the output transistors. Noise rejection blanking time is provided to avoid misdetection by switching. The IC operation recovers automatically after specified recovery time passes. 8 2017-08-04