Datasheet TB67S112PG (Toshiba)
| 制造商 | Toshiba |
| 描述 | BiCD Process Integrated Circuit Silicon Monolithic |
| 页数 / 页 | 15 / 1 — TB67S112PG. Paral el controlled solenoid driver. Features |
| 文件格式/大小 | PDF / 352 Kb |
| 文件语言 | 英语 |
TB67S112PG. Paral el controlled solenoid driver. Features
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TB67S112PG TOSHIBA BiCD Process Integrated Circuit Silicon Monolithic
TB67S112PG Paral el controlled solenoid driver
The TB67S112PG is a solenoid driver for parallel input. Using the BiCD process, the output voltage of 50 V, and the output current of 1.5 A/ch (absolute maximum rating) are realized. Weight: 1.11 g (typ.)
Features
・ BiCD integrated circuit silicon monolithic. ・ Capable of driving up to two solenoids simultaneously. (2-ch sink driver) ・ Capable of driving a unipolar stepping motor with two chips. ・ Built-in over current detection (automatic return / time control) at each output. ・ Built-in thermal shutdown detection (automatic return / time control), which detects errors of the whole device. ・ Built-in output MOSFET for low ON resistance (0.3 Ω (typ.)). ・ High voltage and large current (Refer to “Absolute maximum ratings” and “Operating range”.). ・ Built-in various error detection functions (Thermal shutdown (TSD), over current detection (ISD), and Under voltage lockout(UVLO)) Note: Please be careful about the thermal conditions during use. Start of commercial production 2019-09 © 2019 1 2019-07-08 Toshiba Electronic Devices & Storage Corporation
TB67S112PG Paral el controlled solenoid driver
The TB67S112PG is a solenoid driver for parallel input. Using the BiCD process, the output voltage of 50 V, and the output current of 1.5 A/ch (absolute maximum rating) are realized. Weight: 1.11 g (typ.)
Features
・ BiCD integrated circuit silicon monolithic. ・ Capable of driving up to two solenoids simultaneously. (2-ch sink driver) ・ Capable of driving a unipolar stepping motor with two chips. ・ Built-in over current detection (automatic return / time control) at each output. ・ Built-in thermal shutdown detection (automatic return / time control), which detects errors of the whole device. ・ Built-in output MOSFET for low ON resistance (0.3 Ω (typ.)). ・ High voltage and large current (Refer to “Absolute maximum ratings” and “Operating range”.). ・ Built-in various error detection functions (Thermal shutdown (TSD), over current detection (ISD), and Under voltage lockout(UVLO)) Note: Please be careful about the thermal conditions during use. Start of commercial production 2019-09 © 2019 1 2019-07-08 Toshiba Electronic Devices & Storage Corporation