Datasheet CBRDFSH1-40, CBRDFSH1-60, CBRDFSH1-100 (Central Semiconductor)
| 制造商 | Central Semiconductor |
| 描述 | Surface mount 1.0 AMP SILICON Rectifier-Bridge Schottky |
| 页数 / 页 | 6 / 1 — CBRDFSH1-40. CBRDFSH1-60. CBRDFSH1-100. www.centra lsemi.com. SURFACE … |
| 文件格式/大小 | PDF / 822 Kb |
| 文件语言 | 英语 |
CBRDFSH1-40. CBRDFSH1-60. CBRDFSH1-100. www.centra lsemi.com. SURFACE MOUNT. DESCRIPTION:. 1.0 AMP SILICON
文件文字版本
CBRDFSH1-40 CBRDFSH1-60 CBRDFSH1-100 www.centra lsemi.com SURFACE MOUNT DESCRIPTION: 1.0 AMP SILICON
The CENTRAL SEMICONDUCTOR CBRDFSH1-40,
SCHOTTKY BRIDGE RECTIFIERS
CBRDFSH1-60, and CBRDFSH1-100 are 1.0 Amp full wave bridge rectifiers mounted in a durable epoxy surface mount case, utilizing glass passivated chips.
MARKING CODES: CBRDFSH1-40: SH1-40 CBRDFSH1-60: SH1-60 CBRDFSH1-100: SH1100 BR DFN CASE MAXIMUM RATINGS:
(TA=25°C unless otherwise noted)
CBRDFSH1 SYMBOL -40 -60 -100 UNITS
Peak Repetitive Reverse Voltage VRRM 40 60 100 V DC Blocking Voltage VR 40 60 100 V RMS Reverse Voltage VR(RMS) 28 42 70 V Average Forward Current (TA=50°C) IO 1.0 A Peak Forward Surge Current (8.3ms) IFSM 30 A Operating and Storage Junction Temperature TJ, Tstg -55 to +125 °C
ELECTRICAL CHARACTERISTICS PER DIODE:
(TA=25°C unless otherwise noted)
SYMBOL TEST CONDITIONS TYP MAX UNITS
IR VR=40V (CBRDFSH1-40) 10 200 µA IR VR=60V (CBRDFSH1-60) 10 200 µA IR VR=100V (CBRDFSH1-100) 1.0 200 µA VF IF=1.0A (CBRDFSH1-40) 490 500 mV VF IF=1.0A (CBRDFSH1-60) 600 700 mV VF IF=1.0A (CBRDFSH1-100) 800 850 mV CJ VR=4.0V, f=1.0MHz 250 pF R3 (9-September 2019)
The CENTRAL SEMICONDUCTOR CBRDFSH1-40,
SCHOTTKY BRIDGE RECTIFIERS
CBRDFSH1-60, and CBRDFSH1-100 are 1.0 Amp full wave bridge rectifiers mounted in a durable epoxy surface mount case, utilizing glass passivated chips.
MARKING CODES: CBRDFSH1-40: SH1-40 CBRDFSH1-60: SH1-60 CBRDFSH1-100: SH1100 BR DFN CASE MAXIMUM RATINGS:
(TA=25°C unless otherwise noted)
CBRDFSH1 SYMBOL -40 -60 -100 UNITS
Peak Repetitive Reverse Voltage VRRM 40 60 100 V DC Blocking Voltage VR 40 60 100 V RMS Reverse Voltage VR(RMS) 28 42 70 V Average Forward Current (TA=50°C) IO 1.0 A Peak Forward Surge Current (8.3ms) IFSM 30 A Operating and Storage Junction Temperature TJ, Tstg -55 to +125 °C
ELECTRICAL CHARACTERISTICS PER DIODE:
(TA=25°C unless otherwise noted)
SYMBOL TEST CONDITIONS TYP MAX UNITS
IR VR=40V (CBRDFSH1-40) 10 200 µA IR VR=60V (CBRDFSH1-60) 10 200 µA IR VR=100V (CBRDFSH1-100) 1.0 200 µA VF IF=1.0A (CBRDFSH1-40) 490 500 mV VF IF=1.0A (CBRDFSH1-60) 600 700 mV VF IF=1.0A (CBRDFSH1-100) 800 850 mV CJ VR=4.0V, f=1.0MHz 250 pF R3 (9-September 2019)