Datasheet RFP30N06LE, RF1S30N06LESM (Fairchild) - 2
| 制造商 | Fairchild |
| 描述 | 30A, 60V, ESD Rated, 0.047 Ohm, Logic Level N-Channel Power MOSFETs |
| 页数 / 页 | 8 / 2 — RFP30N06LE, RF1S30N06LESM. Absolute Maximum Ratings. UNITS. Electrical … |
| 文件格式/大小 | PDF / 194 Kb |
| 文件语言 | 英语 |
RFP30N06LE, RF1S30N06LESM. Absolute Maximum Ratings. UNITS. Electrical Specifications. PARAMETER. SYMBOL. TEST CONDITIONS. MIN. TYP. MAX
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RFP30N06LE, RF1S30N06LESM Absolute Maximum Ratings
TA = 25oC, Unless Otherwise Specified
RFP30N06LE, RF1S30N06LESM UNITS
Drain to Source Voltage (Note 1) . VDSS 60 V Drain to Gate Voltage (RGS = 20kΩ) (Note 1) . VDGR 60 V Gate to Source Voltage . VGS +10, -8 V Continuous Drain Current . .ID 30 A Pulsed Drain Current (Note 3) . IDM Refer to Peak Current Curve Pulsed Avalanche Rating . EAS Refer to UIS Curve Power Dissipation . PD 96 W Derate Above 25oC . 0.645 W/oC Electrostatic Discharge Rating, MIL-STD-883, Category B(2). .ESD 2 kV Operating and Storage Temperature . TJ, TSTG -55 to 175 oC Maximum Temperature for Soldering Leads at 0.063in (1.6mm) from Case for 10s. T o L 300 C Package Body for 10s, See Techbrief 334. T o pkg 260 C CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. NOTE: 1. TJ = 25oC to 150oC.
Electrical Specifications
TC = 25oC, Unless Otherwise Specified
PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS
Drain to Source Breakdown Voltage BVDSS ID = 250µA, VGS = 0V, Figure 11 60 - - V Gate to Threshold Voltage VGS(TH) VGS = VDS, ID = 250µA, Figure 10 1 - 2 V Zero Gate Voltage Drain Current IDSS VDS = Rated BVDSS, VGS = 0 - - 25 µA VDS = 0.8 x Rated BVDSS, VGS = 0, TC = 150oC - - 250 µA Gate to Source Leakage Current IGSS VGS = +10, -8V - - ±10 µA Drain to Source On Resistance (Note 2) rDS(ON) ID = 30A, VGS = 5V, Figure 9 - - 0.047 Ω Turn-On Time tON VDD = 30V, ID = 30A, RL = 1Ω, VGS = 5V, - - 140 ns RGS = 2.5Ω, Turn-On Delay Time td(ON) - 11 - ns Figures 13, 16, 17 Rise Time tr - 88 - ns Turn-Off Delay Time td(OFF) - 30 - ns Fall Time tf - 40 - ns Turn-Off Time tOFF - - 100 ns Total Gate Charge Qg(TOT) VGS = 0V to 10V VDD = 48V, - 51 62 nC ID = 30A, Gate Charge at 5V Qg(5) VGS = 0V to 5V - 28 34 nC RL = 1.6Ω Threshold Gate Charge Qg(TH) VGS = 0V to 1V Figures 18, 19 - 1.8 2.6 nC Input Capacitance CISS VDS = 25V, VGS = 0V, - 1350 - pF f = 1MHz Output Capacitance COSS - 290 - pF Figure 12 Reverse Transfer Capacitance CRSS - 85 - pF Thermal Resistance Junction to Case RθJC - - 1.55 oC/W Thermal Resistance Junction to Ambient RθJA - - 80 oC/W
Source to Drain Diode Specifications PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS
Source to Drain Diode Voltage (Note 2) VSD ISD = 30A - - 1.5 V Diode Reverse Recovery Time trr ISD = 30A, dISD/dt = 100A/µs - - 125 ns NOTES: 2. Pulse Test: Pulse Width ≤ 300ms, Duty Cycle ≤ 2%. 3. Repetitive Rating: Pulse Width limited by max junction temperature. See Transient Thermal Impedance Curve (Figure 3) and Peak Current Capability Curve (Figure 5). ©2004 Fairchild Semiconductor Corporation RFP30N06LE, RF1S30N06LESM Rev. B1
TA = 25oC, Unless Otherwise Specified
RFP30N06LE, RF1S30N06LESM UNITS
Drain to Source Voltage (Note 1) . VDSS 60 V Drain to Gate Voltage (RGS = 20kΩ) (Note 1) . VDGR 60 V Gate to Source Voltage . VGS +10, -8 V Continuous Drain Current . .ID 30 A Pulsed Drain Current (Note 3) . IDM Refer to Peak Current Curve Pulsed Avalanche Rating . EAS Refer to UIS Curve Power Dissipation . PD 96 W Derate Above 25oC . 0.645 W/oC Electrostatic Discharge Rating, MIL-STD-883, Category B(2). .ESD 2 kV Operating and Storage Temperature . TJ, TSTG -55 to 175 oC Maximum Temperature for Soldering Leads at 0.063in (1.6mm) from Case for 10s. T o L 300 C Package Body for 10s, See Techbrief 334. T o pkg 260 C CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. NOTE: 1. TJ = 25oC to 150oC.
Electrical Specifications
TC = 25oC, Unless Otherwise Specified
PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS
Drain to Source Breakdown Voltage BVDSS ID = 250µA, VGS = 0V, Figure 11 60 - - V Gate to Threshold Voltage VGS(TH) VGS = VDS, ID = 250µA, Figure 10 1 - 2 V Zero Gate Voltage Drain Current IDSS VDS = Rated BVDSS, VGS = 0 - - 25 µA VDS = 0.8 x Rated BVDSS, VGS = 0, TC = 150oC - - 250 µA Gate to Source Leakage Current IGSS VGS = +10, -8V - - ±10 µA Drain to Source On Resistance (Note 2) rDS(ON) ID = 30A, VGS = 5V, Figure 9 - - 0.047 Ω Turn-On Time tON VDD = 30V, ID = 30A, RL = 1Ω, VGS = 5V, - - 140 ns RGS = 2.5Ω, Turn-On Delay Time td(ON) - 11 - ns Figures 13, 16, 17 Rise Time tr - 88 - ns Turn-Off Delay Time td(OFF) - 30 - ns Fall Time tf - 40 - ns Turn-Off Time tOFF - - 100 ns Total Gate Charge Qg(TOT) VGS = 0V to 10V VDD = 48V, - 51 62 nC ID = 30A, Gate Charge at 5V Qg(5) VGS = 0V to 5V - 28 34 nC RL = 1.6Ω Threshold Gate Charge Qg(TH) VGS = 0V to 1V Figures 18, 19 - 1.8 2.6 nC Input Capacitance CISS VDS = 25V, VGS = 0V, - 1350 - pF f = 1MHz Output Capacitance COSS - 290 - pF Figure 12 Reverse Transfer Capacitance CRSS - 85 - pF Thermal Resistance Junction to Case RθJC - - 1.55 oC/W Thermal Resistance Junction to Ambient RθJA - - 80 oC/W
Source to Drain Diode Specifications PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS
Source to Drain Diode Voltage (Note 2) VSD ISD = 30A - - 1.5 V Diode Reverse Recovery Time trr ISD = 30A, dISD/dt = 100A/µs - - 125 ns NOTES: 2. Pulse Test: Pulse Width ≤ 300ms, Duty Cycle ≤ 2%. 3. Repetitive Rating: Pulse Width limited by max junction temperature. See Transient Thermal Impedance Curve (Figure 3) and Peak Current Capability Curve (Figure 5). ©2004 Fairchild Semiconductor Corporation RFP30N06LE, RF1S30N06LESM Rev. B1